Weekly recap cover, week ending August 28, 2026A 3D NAND word line staircase with channel holes through it, the lead topic of the week ending August 28, 2026; below it, one drawing for each topic the week covered: NAND flash (1), DRAM and HBM (5), SSDs and storage systems (1), Market and earnings (2), Research papers (3).THE WEEK IN MEMORY AND STORAGEWEEK ENDINGAugust 282026LEAD · NAND FLASH15123

Week endingFriday, August 28, 2026Covers August 22 to August 28, 2026 · 12 items

Hot Chips Turns to HBM Base Dies, Nvidia Adds NVHBM, and Kioxia and Sandisk Plan More Fabs

Hot Chips put memory on the main stage. The Sunday tutorial lined up Micron, Samsung and SK hynix on HBM base dies and packaging, with talks on 3D DRAM accelerators and high bandwidth flash alongside, and Samsung brought processing in memory to LPDDR. Nvidia then said it will put the memory controller inside the HBM stack with NVHBM, and SK hynix explained why hybrid bonding matters.

On the supply side, Kioxia and Sandisk said they plan a large Japan expansion, and SK hynix broke ground on its Indiana HBM packaging site. Marvell reported results, Micron reshuffled its top technical and operating roles, and three new papers looked at flash as an HBM tier, a software defined SSD and near memory compute.

Top stories

The rest of the week

DRAM and HBM

Market and earnings

Research papers

  1. FLINT proposes a controller design for using high bandwidth flash as an LLM capacity tier (opens in a new tab)

    The paper treats stacked NAND as a capacity tier beside HBM. It adds a burst buffer controller, moves refresh off the read path and uses a read only translation table for model weights.

    arXiv ·

  2. SxSSD lets trusted software set flash translation policy without giving up isolation (opens in a new tab)

    The authors describe a software defined SSD that lets trusted applications define FTL policies and the exposed interface while keeping the translation layer isolated from a compromised operating system.

    arXiv ·

  3. NOVA pairs a denser DRAM cell with near memory compute for hybrid LLM inference (opens in a new tab)

    The paper combines a vertical channel transistor DRAM cell with processing units placed on the peripheral die and the base die, aimed at models that mix attention, state space and expert layers.

    arXiv ·