Weekly recap cover, week ending July 3, 2026A 3D NAND word line staircase with channel holes through it, the lead topic of the week ending July 3, 2026; below it, one drawing for each topic the week covered: NAND flash (4), Market and earnings (2), Research papers (2).THE WEEK IN MEMORY AND STORAGEWEEK ENDINGJuly 32026LEAD · NAND FLASH422

Week endingFriday, July 3, 2026Covers June 27 to July 3, 2026 · 8 items

Kioxia and Sandisk Start 10th Generation Flash, and SK hynix Maps Its Next Fabs

The week belonged to NAND. Kioxia and Sandisk each announced samples of their 10th generation BiCS flash, and the two companies said production has begun at the second fab at Kitakami. Both releases lean on the bonded array and logic wafer approach, now carried into a new generation aimed at data center SSDs.

Capacity and supply news ran alongside it. SK hynix laid out plans for a new NAND fab and packaging site in Cheongju and a separate Southwestern cluster, and Micron signed another long term supply agreement, this time with an automaker. Two papers looked at running memory work closer to the DRAM and at trimming storage I/O overhead in virtualized servers.

Top stories

The rest of the week

NAND flash

Market and earnings

Research papers

  1. Paper schedules processing in memory and CPU work together on phones (opens in a new tab)

    COSM is a scheduling framework that lets in memory compute commands run in the idle gaps of CPU memory traffic on a mobile device, so on device language model work does not stall other apps. The results are from simulation and the paper is an ISCA 2026 entry.

    arXiv ·

  2. Paper cuts storage I/O round trips in virtualized servers (opens in a new tab)

    The authors move the point where one guest request fans out to storage, GPU and accelerator devices into the SPDK backend, so the guest sends one combined request. They report lower latency in an SPDK based test setup. It is a letter submitted for review.

    arXiv ·