Fab Tracker

This page tracks where chips are made, who owns each fabA fab is a chip factory: cleanrooms full of tools that turn bare wafers into finished chips, step by step over weeks., cleanroomA cleanroom is a room whose air is filtered so finely that dust too small to see cannot settle on a wafer and spoil the chips on it. and packagingPackaging mounts finished dies on a substrate, connects them and seals them, turning bare silicon into a part a circuit board can hold. Advanced packaging joins several dies in one package. plant, what is being built and when it starts output, the money behind it, who supplies whom, and what the industry’s forecasters expect. Every date and amount comes from a company filing, a company page or a named analyst, listed under Sources at the end. For the makers’ results each quarter, see the Earnings Desk. For memory and compute flown in space, including the orbital data center filings, see Signals.

Wave one covers the memory and storage makers and the chokepoints they depend on. Wave two covers the largest foundryA foundry makes chips that other companies design, selling manufacturing rather than chips of its own. and logicA logic chip computes or controls, as processors, GPUs and SSD controllers do, as opposed to a memory chip, which stores data. makers, starting with TSMC, Samsung, Intel, GlobalFoundries, SMIC, UMC, Tower, PSMC and Rapidus, and now includes Hua Hong and VIS. Wave three has started with the packaging houses Amkor, ASE, JCET and Powertech, the tool makers Tokyo Electron, Lam Research, KLA and Applied Materials and the waferA wafer is the thin disc of pure silicon that chips are built on, many at a time, before it is cut into separate dies. makers GlobalWafers, Shin-Etsu and SUMCO, with more to follow.

What each fab makes

A fab’s history is the products and process nodesA process node names a generation of a maker’s manufacturing process. Smaller names once meant smaller transistors; for logic they are now labels rather than measurements. it moves through, with NAND at more layers each generation and DRAM and logic at each smaller node. Each step below is the date a maker’s own release, history page or filing gives for a product or node at that fab. TSMC’s steps come from its yearly filings, including the 2017, 2020 and 2022 Form 20-Fs, which list each fab’s most advanced node in volume productionVolume production is when a fab makes a product in full commercial quantities, past engineering samples and trial runs. at year end. A plan the source gives, such as a node a fab is to make next, is marked planned and drawn hollow.

Where the source says so, the Tool column names the machines a step depends on. They include the first EUVEUV lithography prints with light of a far shorter wavelength than deep ultraviolet, made by striking droplets of tin with a laser. It needs mirrors and a vacuum instead of lenses, and ASML is its only maker. lines at each maker and the first commercial High NA EUVHigh NA EUV is the newer generation of EUV lithography, whose optics have a higher numerical aperture, so it prints finer features in a single exposure. scanner, ASML’s TWINSCAN EXE:5000, at Intel in Oregon.

The chart follows NAND by its layer count. DRAM nodes have names (1z, 1-alpha, 1-beta, 1c), and logic node names stopped matching any physical size years ago, so both are in the table only. Many steps are missing because makers rarely say which fab runs which node, and a release that names a node without its fab is left out.

Samsung’s steps come from its releases on the Xi’an fab, 20nm DDR3, first 10nm-class DRAM and Pyeongtaek Line 1. Its V1 EUV line and Pyeongtaek foundry line releases add the foundry side. SK hynix’s come from its company history and the M16 completion. Other steps rest on the Intel NAND and SSD deal, the Chongqing subsidiary story and the 1anm DRAM release. Micron’s come from its 232-layer NAND release. Kioxia’s come from its Yokkaichi history and the Fab 6 opening. Newer steps rest on the Kitakami Fab2 start and the 5th-generation BiCS FLASH release, along with the 10th-generation sample shipments and production start. Intel’s come from its Ireland and Panther Lake releases. SMIC’s come from the first 12-inch fab and Shanghai 12-inch fab releases. YMTC’s come from its milestones page and CXMT’s from its history page. UMC’s come from its Form 20-F and Rapidus’s from its home page.

What each fab makes

The most NAND layers in production went from 64 in 2017 to 332 in 2026

NAND layers a fab began making, on the date the source gives; the line marks the most layers in production by then

Where the sites are

Each bubble counts the tracked sites in one country. Choose a bubble to zoom in on its sites, drag to pan, scroll to zoom, and choose a site to read its details. The table further down lists them one by one.

Each site list comes from the company’s own pages and filings. Micron’s corporate profile, Samsung’s manufacturing sites page and SK hynix’s global network page cover the memory makers. TSMC’s GIGAFAB and fabs pages cover the largest foundry. JCET, Powertech, Tokyo Electron, Tower, Shin-Etsu and SUMCO publish their own site pages. Samsung’s Taylor fab page and sustainability page and Intel’s responsibility report add detail. Filings from Intel, GlobalFoundries, Amkor, ASE, SMIC, Hua Hong, Seagate and Western Digital supply the rest. PSMC’s manufacturing services and contact pages give its plants.

Who owns what

Bars count sites, because few makers publish how many wafers a site runs, so a large campus and a small plant each count as one. Choose a company’s bar to show only its sites on the map and in the table below.

Who NVIDIA buys wafers and memory from is in its 10-K. Who runs the Kitakami Plant is on Kioxia’s plant page.

Where a wafer capacityWafer capacity is how many wafers a fab can start in a month, the usual measure of how much a fab can make. is published, it is here. Most come from analysts relaying trade press, so they are estimates with the publisher named.

Who owns what

The largest published capacity is Samsung Electronics DRAM

300mm wafers a month, as each publisher states it, with the as-of date

Show the numbers and sources

Who	Product	Wafers a month	As of	By	Source
SK hynix (company-wide)	DRAM	550,000	2026-06-05	TrendForce, citing The Elec	TrendForce
Samsung Electronics (company-wide)	DRAM	650,000 to 700,000	2025-11-19	TrendForce, citing ETNews	TrendForce
SMIC (company-wide)	logic	1,058,750 (8-inch equivalent)	2025-12-31	Company	HKEX filing
PSMC (company-wide)	wafers	400,000 (8-inch equivalent)	2026-10-13	Company	Powerchip (PSMC)
Hua Hong Semiconductor (company-wide)	specialty	486,000 (8-inch equivalent)	2025-12-31	Company	Hua Hong Semiconductor (HKEX filing)
Wuhan fabs 1 and 2 (YMTC)	NAND	160,000	2024-12-31	TrendForce, citing Reuters and analyst reports	TrendForce
Wuxi (SK hynix)	DRAM	200,000	2026-06-05	TrendForce, citing The Elec	TrendForce
P3 (PSMC)	DRAM	30,000	2026-01-21	Company	Powerchip (PSMC)

Wafers are 300mm unless a row says 8-inch equivalent. Figures from analysts or trade press are estimates and carry their publisher; where neither a company nor a named analyst gives a figure, the tracker says "not published".

Every site

At first the table shows 20 sites. Filter by status, kind, owner or country, or show them all. The map above follows the same filters. “Next” is the next date the company gives for the site.

Every site

Fabs are the largest group of tracked sites

Positions and places are city level. "Not published" means no company or named analyst gives the site's wafer capacity; analyst figures carry the analyst's name. A joint-venture site lists every owner.

What is being built

Each lane runs from the start of construction, or the purchase, to the first output the company expects. First output is not full output, and Micron says a new fab’s output becomes meaningful a few quarters after it starts.

Company releases supply the dates. SK hynix has them for Yongin, Y2 and M17 and Indiana. Kioxia and Sandisk announced their Japan investment together. GlobalFoundries covers Dresden, Singapore and New York. PSMC covers its P5 plant sale, Tongluo fab opening and DRAM upgrade. Others come from VSMC, Applied Materials, KLA and Lam, with Lam’s Malaysia page, the Lin-gang administration and JCET’s automotive packaging release adding detail. Nanya and Micron’s 10-K cover the other memory builds, and TrendForce covers Micron in Taiwan.

What is being built

What is being built, and when it starts making chips

Construction to first output or cleanroom opening, dated by each company; dashed bars are planned groundbreakings

Show the numbers

Site	Maker	Dates
Fab 20	TSMC	running since 2025
Fab 22	TSMC	running since 2025
Kitakami K2	Kioxia NAND	running since Sep 2025
Gujarat assembly and test	Micron	running since 2026
Cheongju M15X	SK hynix DRAM	output 2H 2026
Fab 12i P3	UMC	output 2H 2026
Singapore HBM packaging	Micron	Jan 2025 → early 2027
Yongin Phase 1	SK hynix	cleanroom opens early 2027
Idaho ID1	Micron DRAM	Sep 2022 → mid-2027
Tongluo, Taiwan	Micron DRAM	bought Mar 2026 → mid-2027
IIM-1 (Chitose)	Rapidus logic	output 2027
Miyagi Innovative Production Center	Tokyo Electron tools	cleanroom opens 2027
VSMC Tampines 300mm fab (VIS and NXP)	Vanguard International Semiconductor (VIS)	Dec 2024 → 2027
Arizona Facility (Peoria)	Amkor Technology advanced-packaging	2025 → 1H 2028
Pyeongtaek P5	Samsung Electronics	output 2028
Idaho ID2	Micron DRAM	2026 → late 2028
Hiroshima cleanroom	Micron DRAM	Jul 2026 → late 2028
Singapore NAND fab	Micron	Jan 2026 → 2H 2028
Cheongju M17	SK hynix NAND	cleanroom opens Dec 2028
Yongin Y2	SK hynix	cleanroom opens Jun 2029
Malta new fab 1 (U.S.-Japan initiative)	GlobalFoundries	ground 2026 → output 2029
West Lafayette HBM packaging	SK hynix	output 2H 2029
New York fab 1	Micron DRAM	Jan 2026 → 2030

The money

Investment plans and government awards, as each source states them, in US dollars first.

NIST CHIPS Program Office pages cover the U.S. awards for Intel, GlobalWafers, GlobalWafers in Texas, Samsung in Texas and TSMC Arizona. Company amounts come from TSMC’s 20-F, Micron’s earnings remarks, SK hynix’s second-quarter results, Kioxia Holdings’ first-quarter results, JCET’s first-half and first-quarter releases and Intel’s U.S. manufacturing page.

The money

SK hynix has the largest stated plan on the tracker

Each amount in US dollars, largest first; amounts are never added up

Show the numbers and sources

Company	Project	What	Amount	Dated	Source
Amkor Technology	Arizona Facility (Peoria)	Subsidy: CHIPS Act direct funding	$407M	Dec 2024	U.S. SEC
Applied Materials	Tampines Campus	Investment	$500M		Applied Materials (via Singapore EDB)
GlobalFoundries	GlobalFoundries (company-wide)	Subsidy	$1.5B	Nov 2024	U.S. SEC
GlobalFoundries	Malta new fab 1 (U.S.-Japan initiative)	Investment	$10B	Oct 14, 2026	GlobalFoundries
GlobalFoundries	Singapore	Investment	$4B	Sep 12, 2023	GlobalFoundries
GlobalWafers	GlobalWafers (company-wide)	Subsidy	$406M	Dec 2024	NIST, 2024
Intel	Intel (company-wide)	Subsidy	$7.865B	Nov 2024	NIST, 2024
Intel	Arizona fabs (Ocotillo, Chandler)	Investment	$32B		Intel
Intel	New Mexico advanced packaging (Rio Rancho)	Investment	$4B		Intel
Intel	Ohio fabs (New Albany)	Investment	$28B		Intel
Intel	Oregon fabs (Hillsboro)	Investment	$36B		Intel
JCET	Lingang automotive packaging base	Investment	CNY 4.4B		JCET
JCET	Shanghai new advanced packaging and testing facility	Investment	$1.1Bstated CNY 7.8B	Jun 2026	JCET, Board of Governors of the Federal Reserve System (H.10), via FRED
Kioxia	Kioxia and Sandisk (company-wide)	Investment plan	$31B	Aug 2026	KIOXIA Corporation
KLA	Newport R&D and manufacturing center	Investment	$138M		KLA Corporation
Micron	Micron (company-wide)	Subsidy	$6.1B	Dec 2024	Kioxia (investor relations)
Micron	Manassas fab	Subsidy: CHIPS Act	$275M	Jun 2025	Kioxia (investor relations)
Micron	Micron Research Labs	Investment	$10B	Aug 2026	Kioxia (investor relations)
Micron	New York fab 1	Subsidy: New York State (non-binding term sheet)	$5.5B		Kioxia (investor relations)
Micron	Tongluo, Taiwan	Investment	$1.8B		Kioxia (investor relations)
Nanya Technology	New Taipei new fab	Investment	$10.2Bstated TWD 300B	Jun 23, 2022	Nanya Technology, Board of Governors of the Federal Reserve System (H.10), via FRED
PSMC	PSMC and Micron (company-wide)	Milestone	$1.8B	Mar 2026	Powerchip (PSMC)
Samsung Electronics	Taylor	Investment	$17B		Samsung Semiconductor Global, 2025
SK hynix	SK hynix (company-wide)	Investment plan	$733.1Bstated KRW 1,100T	Jun 2026	SK hynix Newsroom, Board of Governors of the Federal Reserve System (H.10), via FRED
SK hynix	Cheongju M17	Investment	$13.5Bstated KRW 19.1T	Aug 2026	SK hynix Newsroom, Board of Governors of the Federal Reserve System (H.10), via FRED
SK hynix	West Lafayette HBM packaging	Investment	$4B		SK hynix Newsroom
SK hynix	Yongin Phase 1	Investment	$21.2Bstated KRW 31T	Feb 25, 2026	SK hynix Newsroom, Board of Governors of the Federal Reserve System (H.10), via FRED
SK hynix	Yongin Y2	Investment	$24.8Bstated KRW 35.2T	Aug 2026	SK hynix Newsroom, Board of Governors of the Federal Reserve System (H.10), via FRED
TSMC	Fab 21	Investment	$65B		NIST, 2024
TSMC	Fab 21	Subsidy: CHIPS Act direct funding	$6.6B		NIST, 2024
YMTC	Wuhan Phase III	Investment	CNY 20.72B		TrendForce

Amounts are in US dollars. Where a company or government states won, yen, New Taiwan dollars or yuan, the dollar figure uses the Federal Reserve H.10 average for the quarter the amount is dated, and the stated amount is under it (B is billion, T is trillion, M is million). Amounts are not added up.

Who supplies whom

Links a party to the deal has stated, such as a customer naming its suppliers in a filing.

Partners also appear in the SK hynix investment explainer and the TSMC 2025 annual report.

Who supplies whom

Who supplies whom

Solid lines are confirmed by a party to the deal; dashed lines are reported by named press or analysts

The tools that fill them

A fab is only as advanced as its scanners. This section dates each step of lithography, from the first KrFA krypton fluoride excimer laser is a deep ultraviolet light source for lithography, with a longer wavelength than the argon fluoride laser that followed it. stepper to High-NA EUV, and counts the EUV systems ASML has sold.

Shorter light and a wider lens print finer features

LithographyLithography prints a chip’s patterns by shining light through a mask onto a light-sensitive coating on the wafer, so later steps can etch or fill only where the light landed. prints a chip’s patterns with light. The shortest feature it can print shrinks as the light’s wavelength gets shorter and as the lens’s numerical apertureNumerical aperture measures how wide a cone of light a lens gathers. A higher numerical aperture lets a lithography tool print smaller features with the same light. (NA) grows. So the industry moved step by step, from KrF lasers at 248nm to ArFAn argon fluoride excimer laser is the deep ultraviolet light source behind the most advanced lithography before EUV, used both dry and with water immersion. at 193nm, then ArF with water under the lens (immersionImmersion lithography fills the gap between the lens and the wafer with water, which raises the numerical aperture so the same ArF light prints finer features.) to push NA past 1.0, and finally extreme ultraviolet (EUV) at 13.5nm.

This data holds 31 milestones and 8 years of ASML’s unit counts, from 24 public sources. A milestone is a first, a record, a shipment or an export rule, with the stage it had reached (a prototype, shipping, volume production) and the figure its source prints. Each date is as exact as its source, whether that is a year, a month or a day.

Sources are the tool makers, the chip makers and their filings. Nothing in the lithography data is estimated. Each date and count is as its source prints it, and where ASML prints both units and sales, they appear as printed, side by side.

Nikon’s history page and 2006 annual report date its scanners. Canon’s releases on Toshiba Memory and the Texas Institute for Electronics and its nanoimprint system date its tool. SMEE’s product page lists the Chinese scanners. TechInsights compares the latest NAND. Chip makers’ own releases date the rest. Those include Samsung’s first EUV DRAM and its V1 line and 14nm EUV DDR5. Micron’s EUV in Japan and 1-gamma shipment belong there too, as do TSMC’s N7+, SK hynix’s High NA and Intel’s High NA.

How the steps work, from the resist and the mask to the scanner and overlay, is in the Photolithography series, starting with how a chip is printed with light.

Who brought each step, and who used it first

Tool makers are on top, then the chip makers by what they make, then the export rules that decide who may buy the tools. Color is the lithography step.

ASML’s EUV sales since 2018

In its 2023 Form 20-F, ASML describes itself as currently the world’s only manufacturer of EUV lithography systems. Its annual reports print how many EUV systems it sold each year from 2018, the older tools by step for 2020 to 2023 (2024 and 2025 print one DUV total, and 2018 and 2019 print immersion only), and the share of its sales to customers in China for 2023 to 2025. The chart counts every EUV system ASML sold worldwide each year, as those reports give them (the 2019 report and the 2022, 2023 and 2025 Form 20-F), which includes tools outside these fabs. The filings count on slightly different bases over the years, and for 2024 and 2025 the chart adds the High-NA systems to the standard ones.

The tools that fill them

ASML sold 31 EUV systems in 2020 and 48 in 2025

ASML sold 31 EUV systems in 2020, 53 in 2023 and 48 in 2025 (44 NXE and 4 High-NA), and customers in China were 26.3 percent of its sales in 2023, 36.1 percent in 2024 and 29.1 percent in 2025.

Below, a table of the same years adds the older tools ASML sold each year.

Latest sales are in ASML’s second-quarter 2026 results. ASML’s own pages on its history and the PAS 5500 cover the products and dates. Its pages on High NA and light in lithography add the detail. Its July 2026 release covers the first high-volume High NA logic product.

All the milestones, newest first

Rows run newest first. Choose a heading to sort by it.

What the lithography data does not tell you

This list holds firsts, records, shipments and export rules and makes no claim to cover every tool or node. A step a maker never dated in public is absent, so a missing row does not mean a late step. The NAND lane holds one milestone, Canon’s nanoimprint tool at Toshiba Memory in 2017. Unit counts come from ASML alone. Its 2025 Form 20-F names Canon and Nikon as the makers whose DUV tools compete with its own, and those tools are not counted. China’s own tools are not counted either. Its main maker is SMEE, and SMEE’s product page lists its SSX600 scanners for 90nm, 110nm and 280nm layers and prints no shipment numbers, and no maker or ministry page found yet prints a count of China’s newer tools.

For the dies themselves, see the DRAM die timeline and the NAND die timeline, and for why new memory supply takes so long, The Memory Cycle.

Forecasts

Industry forecasts, each with its publisher and date, so a newer forecast sits beside an older one rather than over it.

SEMI’s forecasts cover 300mm memory equipment and 300mm fab equipment. News items on Samsung’s 1c DRAM, SK hynix’s DRAM, YMTC, YMTC’s Wuhan venture and CXMT’s G5 DRAM are from TrendForce. Exchange rates come from the Federal Reserve’s DEXTAUS series.

Forecasts

Forecasts sit side by side, each with its publisher and date

One group per measure and unit; bars compare periods inside a group, never across groups

Show the numbers and sources

Measure	Period	Forecast	By	Source
Equipment spending, USD B, company guidance	2026	2.5 to 3	Amkor, 2026-02-20	U.S. SEC
Capacity, low-NA EUV systems a year	2026	65	ASML, 2026-07-15	ASML
Capacity, DUV immersion systems a year	2026	130	ASML, 2026-07-15	ASML
Capacity, million 300mm memory wafers a month	2026	4.1	SEMI, 2026-06-29	SEMI
Capacity, million 300mm memory wafers a month	2027	4.2	SEMI, 2026-06-29	SEMI
Equipment spending, USD B, 300mm memory equipment	2026	52	SEMI, 2026-06-29	SEMI
Equipment spending, USD B, 300mm memory equipment	2027	57	SEMI, 2026-06-29	SEMI
Equipment spending, USD B, 300mm fab equipment	2026	133	SEMI, 2026-04-01	SEMI
Equipment spending, USD B, 300mm fab equipment	2027	151	SEMI, 2026-04-01	SEMI
Equipment spending, USD B, memory equipment	2027-2029	175	SEMI, 2026-04-01	SEMI
Capacity, 1c DRAM wafers a month, Samsung	end of 2026	200000	TrendForce (citing ETNews), 2025-11-19	TrendForce
Capacity, DRAM wafers a month added, SK hynix Yongin first fab	1H 2030	360000	TrendForce (citing The Elec), 2026-06-05	TrendForce
Capacity, wafers a month, SK hynix M15X	2027	80000	TrendForce (citing The Elec), 2026-06-05	TrendForce
Capacity, million DRAM wafers a month, SK hynix	2030	1	TrendForce (citing The Elec), 2026-06-05	TrendForce
Capacity, wafers a month at start, SK hynix M15X	2H 2026	40000	TrendForce (citing The Elec), 2026-06-05	TrendForce
Equipment spending, USD B, company guidance	2026	52 to 56	TSMC, 2026-04-16	TSMC

Downloads

Download the tracker’s data as CSV or JSON, with one row per sourced fact. Each row keeps the ledger claim it comes from, the words it quotes and the source to check it against. Amounts are in US dollars first, then as stated.

Downloads

Every file joins on a site, a company or a publisher

• SitesOne row per sourced fact: CSV or JSON
• EventsOne row per dated event: CSV or JSON
• Wafer capacityOne row per published capacity: CSV or JSON
• Investments and subsidiesOne row per stated amount: CSV or JSON
• Supply linksOne row per supply link: CSV or JSON
• Industry forecastsOne row per forecast figure: CSV or JSON