Explore · Sourced data

HBM Timeline

High Bandwidth Memory stacks from Samsung, SK hynix and Micron, from the first HBM to HBM4E, placed at the date of the earliest release or datasheet cited for each, with the accelerators that used them. Choose a measure and see how stack bandwidth, pin speed and capacity moved. Every point links to its source.

2015202020254096GB/sSK hynix HBM4E 12-layer 48GB (samples), 6/2026

Chart of HBM stacks by year

Stack bandwidth climbed from 128GB/s in 2013 to 4096GB/s in 2026

Pin speed climbed from 1Gb/s in 2013 to 16Gb/s in 2026

Stack capacity climbed from 4GB in 2016 to 48GB in 2026

Measure

Stack bandwidth runs from 128GB/s (2013) to 4096GB/s (2026) across 28 stacks. A hollow marker is a lower limit the source prints, such as more than 11Gb/s.
010002000300040005000Bandwidth of one stack the vendor stated, GB/s20132014201520162017201820192020202120222023202420252026SK hynix HBM 4-high (development; co-developed with AMD): 128GB/s, 12/2013Samsung HBM2 4GB (later called Flarebolt): 256GB/s, 1/2016SK hynix HBM2 2GB 2-high (line-up slide): 256GB/s, 8/2016SK hynix HBM2 4GB 4-high (line-up slide): 256GB/s, 8/2016SK hynix HBM2 8GB 8-high (line-up slide): 256GB/s, 8/2016Samsung HBM2 8GB Aquabolt: 307GB/s, 1/2018SK hynix HBM2E 16GB (development announced): ≥460GB/s, 8/2019Samsung HBM2E 16GB Flashbolt: 410GB/s, 2/2020SK hynix HBM2E 16GB: ≥460GB/s, 7/2020SK hynix HBM3 (24GB and 16GB types): 819GB/s, 10/2021SK hynix HBM3: 819GB/s, 6/2022SK hynix HBM3 12-layer 24GB: 819GB/s, 4/2023Micron HBM3 Gen2 24GB 8-high (marketed as HBM3E from late 2023): ≥1200GB/s, 2023Micron HBM3E 24GB 8-high: ≥1200GB/s, 2023Micron HBM3E 36GB 12-high (announced option, sampling planned for Q1 2024): ≥1200GB/s, 2023SK hynix HBM3E (first samples): 1150GB/s, 8/2023Samsung HBM3 8H and 12H (16GB and 24GB): 819GB/s, 10/2023Samsung HBM3E Shinebolt: ≥1200GB/s, 10/2023Samsung HBM3E 12H 36GB: 1280GB/s, 2/2024SK hynix HBM3E 8-layer 24GB: 1180GB/s, 3/2024SK hynix HBM3E 12-layer 36GB: 1229GB/s, 9/2024SK hynix HBM4 12-layer 36GB: ≥2000GB/s, 3/2025Micron HBM4 36GB 12-high: ≥2000GB/s, 6/2025SK hynix HBM4 (mass-production system ready): ≥2560GB/s, 9/2025Samsung HBM4 (24GB to 36GB, 12-layer): 2995GB/s, 2/2026Samsung HBM4E 12-layer 48GB (samples): 3600GB/s, 5/2026SK hynix HBM4E 12-layer 48GB (samples): 4096GB/s, 6/2026Micron HBM4 36GB 12-high (higher speed grade): ≥2800GB/s, 2026
Pin speed runs from 1Gb/s (2013) to 16Gb/s (2026) across 28 stacks. A hollow marker is a lower limit the source prints, such as more than 11Gb/s.
05101520Speed per pin the shipping stack was stated at, Gb/s20132014201520162017201820192020202120222023202420252026SK hynix HBM 4-high (development; co-developed with AMD): 1Gb/s, 12/2013Samsung HBM2 4GB (later called Flarebolt): 2Gb/s, 1/2016SK hynix HBM2 2GB 2-high (line-up slide): 2Gb/s, 8/2016SK hynix HBM2 4GB 4-high (line-up slide): 2Gb/s, 8/2016SK hynix HBM2 8GB 8-high (line-up slide): 2Gb/s, 8/2016Samsung HBM2 8GB Aquabolt: 2.4Gb/s, 1/2018SK hynix HBM2E 16GB (development announced): 3.6Gb/s, 8/2019Samsung HBM2E 16GB Flashbolt: 3.2Gb/s, 2/2020SK hynix HBM2E 16GB: 3.6Gb/s, 7/2020SK hynix HBM3 (24GB and 16GB types): 6.4Gb/s, 10/2021SK hynix HBM3: 6.4Gb/s, 6/2022SK hynix HBM3 12-layer 24GB: 6.4Gb/s, 4/2023Micron HBM3 Gen2 24GB 8-high (marketed as HBM3E from late 2023): ≥9.2Gb/s, 2023Micron HBM3E 24GB 8-high: ≥9.2Gb/s, 2023Micron HBM3E 36GB 12-high (announced option, sampling planned for Q1 2024): ≥9.2Gb/s, 2023SK hynix HBM3E (first samples): 9Gb/s, 8/2023Samsung HBM3 8H and 12H (16GB and 24GB): 6.4Gb/s, 10/2023Samsung HBM3E Shinebolt: 9.8Gb/s, 10/2023Samsung HBM3E 12H 36GB: 10Gb/s, 2/2024SK hynix HBM3E 8-layer 24GB: 9.2Gb/s, 3/2024SK hynix HBM3E 12-layer 36GB: 9.6Gb/s, 9/2024SK hynix HBM4 12-layer 36GB: ≥7.8Gb/s, 3/2025Micron HBM4 36GB 12-high: ≥7.8Gb/s, 6/2025SK hynix HBM4 (mass-production system ready): ≥10Gb/s, 9/2025Samsung HBM4 (24GB to 36GB, 12-layer): 11.7Gb/s, 2/2026Samsung HBM4E 12-layer 48GB (samples): 14Gb/s, 5/2026SK hynix HBM4E 12-layer 48GB (samples): 16Gb/s, 6/2026Micron HBM4 36GB 12-high (higher speed grade): ≥11Gb/s, 2026
Stack capacity runs from 2GB (2016) to 48GB (2026) across 24 stacks.
  • Record: the best any stack had reached by then
  • Samsung
  • SK hynix
  • Micron
  • Highest value a JEDEC HBM revision defined

12 records, oldest first. Each stack beat every earlier stack on stack bandwidth.

  1. 128GB/s

    SK hynix HBM 4-high (development; co-developed with AMD)

    Maker
    SK hynix
  2. 256GB/s

    Samsung HBM2 4GB (later called Flarebolt)

    Maker
    Samsung
  3. 307GB/s

    Samsung HBM2 8GB Aquabolt

    Maker
    Samsung
  4. ≥460GB/s

    SK hynix HBM2E 16GB (development announced)

    Maker
    SK hynix
  5. 819GB/s

    SK hynix HBM3 (24GB and 16GB types)

    Maker
    SK hynix
  6. ≥1200GB/s

    Micron HBM3 Gen2 24GB 8-high (marketed as HBM3E from late 2023)

    Maker
    Micron
  7. 1280GB/s

    Samsung HBM3E 12H 36GB

    Maker
    Samsung
  8. ≥2000GB/s

    SK hynix HBM4 12-layer 36GB

    Maker
    SK hynix
  9. ≥2560GB/s

    SK hynix HBM4 (mass-production system ready)

    Maker
    SK hynix
  10. 2995GB/s

    Samsung HBM4 (24GB to 36GB, 12-layer)

    Maker
    Samsung
  11. 3600GB/s

    Samsung HBM4E 12-layer 48GB (samples)

    Maker
    Samsung
  12. 4096GB/s

    SK hynix HBM4E 12-layer 48GB (samples)

    Maker
    SK hynix

11 records, oldest first. Each stack beat every earlier stack on pin speed.

  1. 1Gb/s

    SK hynix HBM 4-high (development; co-developed with AMD)

    Maker
    SK hynix
  2. 2Gb/s

    Samsung HBM2 4GB (later called Flarebolt)

    Maker
    Samsung
  3. 2.4Gb/s

    Samsung HBM2 8GB Aquabolt

    Maker
    Samsung
  4. 3.6Gb/s

    SK hynix HBM2E 16GB (development announced)

    Maker
    SK hynix
  5. 6.4Gb/s

    SK hynix HBM3 (24GB and 16GB types)

    Maker
    SK hynix
  6. ≥9.2Gb/s

    Micron HBM3 Gen2 24GB 8-high (marketed as HBM3E from late 2023)

    Maker
    Micron
  7. 9.8Gb/s

    Samsung HBM3E Shinebolt

    Maker
    Samsung
  8. 10Gb/s

    Samsung HBM3E 12H 36GB

    Maker
    Samsung
  9. 11.7Gb/s

    Samsung HBM4 (24GB to 36GB, 12-layer)

    Maker
    Samsung
  10. 14Gb/s

    Samsung HBM4E 12-layer 48GB (samples)

    Maker
    Samsung
  11. 16Gb/s

    SK hynix HBM4E 12-layer 48GB (samples)

    Maker
    SK hynix

6 records, oldest first. Each stack beat every earlier stack on stack capacity.

  1. 4GB

    Samsung HBM2 4GB (later called Flarebolt)

    Maker
    Samsung
  2. 8GB

    SK hynix HBM2 8GB 8-high (line-up slide)

    Maker
    SK hynix
  3. 16GB

    SK hynix HBM2E 16GB (development announced)

    Maker
    SK hynix
  4. 24GB

    SK hynix HBM3 (24GB and 16GB types)

    Maker
    SK hynix
  5. 36GB

    Micron HBM3E 36GB 12-high (announced option, sampling planned for Q1 2024)

    Maker
    Micron
  6. 48GB

    Samsung HBM4E 12-layer 48GB (samples)

    Maker
    Samsung

How to read it

Each point is one HBM stack that a vendor release or datasheet describes. It sits at the date of the earliest public source cited for that stack, which is the date of the announcement or production news and not the date the stack reached a shipping accelerator. The chart shows 29 stacks from 29 public sources (53 with the accelerators below), not every stack ever made, running from 2013 to 2026, and a stack with no stated value for the chosen measure is left off.

The values are what the vendor states for the shipping stack. A speed a vendor tested a stack to, above what it sells, is not on the chart. Where a vendor prints a lower limit, such as more than 11Gb/s, the marker is hollow and the table shows a sign in front of the number. Bandwidth in the table is the figure the source states. A figure worked out from two the source prints, such as bandwidth from pin speed and interface width, pin speed from bandwidth, or die density from capacity and layer count, carries a D.

The dashed line is the highest value any JEDEC HBM revision had defined by each date. Each revision is dated and read from JEDEC's own public page or press release. A vendor can ship a stack above the standard, so a marker above the line is not an error.

Every stack and its source

Vendor
Generation
  • means the maker hasn't published this figure.
  • Derived: worked out from two figures in the source, such as pin speed and interface width, not stated by it.
StackVendorGenerationStatusDatePin speedBandwidthHeightCapacityDieSourceNote
HBM4 36GB 12-high (volume production)MicronHBM4Mass production10/2026not publishednot published12-high36GBnot publishedMicron 2026 releaseMicron’s Form 10-K for fiscal 2026, the year ended 3 September 2026, says it began volume production of this part in 2026.
HBM4E 12-layer 48GB (samples)SK hynixHBM4ESampling6/202616Gb/s4096GB/s, derived12-high48GB32Gb, derivedSK hynix 2026 releaseStacked with Advanced MR-MUF; the release says thermal resistance is 17% better than its HBM4.
HBM4E 12-layer 48GB (samples)SamsungHBM4ESampling5/202614Gb/s3600GB/s12-high48GB32Gb, derivedSamsung 2026 releaseBuilt on the 1c DRAM node with a Samsung Foundry 4nm logic base die. 8-layer 32GB and 16-layer 64GB versions are planned.
HBM4 (24GB to 36GB, 12-layer)SamsungHBM4Mass production2/202611.7Gb/s2995GB/s, derived12-high36GB24Gb, derivedSamsung 2026 release
HBM4 36GB 12-high (higher speed grade)MicronHBM4Sampling2026≥11Gb/s≥2800GB/s12-high36GB24Gb, derivedMicron 2026 product pageMicron 2026 release
HBM4 (mass-production system ready)SK hynixHBM4Sampling9/2025≥10Gb/s≥2560GB/s, derivednot publishednot publishednot publishedSK hynix 2025 release
HBM4 36GB 12-highMicronHBM4Sampling6/2025≥7.8Gb/s, derived≥2000GB/s12-high36GB24Gb, derivedMicron 2025 release
HBM4 12-layer 36GBSK hynixHBM4Sampling3/2025≥7.8Gb/s, derived≥2000GB/s12-high36GB24Gb, derivedSK hynix 2025 release
HBM3E 12-layer 36GBSK hynixHBM3EMass production9/20249.6Gb/s1229GB/s, derived12-high36GB24GbSK hynix 2024 release
HBM3E 8-layer 24GBSK hynixHBM3EMass production3/20249.2Gb/s, derived1180GB/s8-high24GB24GbSK hynix 2024 releaseSK hynix 2024 release
HBM3E 12H 36GBSamsungHBM3ESampling2/202410Gb/s, derived1280GB/s12-high36GB24Gb, derivedSamsung 2024 release
HBM3 8H and 12H (16GB and 24GB)SamsungHBM3Mass production10/20236.4Gb/s819GB/s12-high24GB16Gb, derivedSamsung 2026 product pageSamsung 2023 release
HBM3E ShineboltSamsungHBM3ESampling10/20239.8Gb/s≥1200GB/snot publishednot publishednot publishedSamsung 2023 release
HBM3E (first samples)SK hynixHBM3ESampling8/20239Gb/s, derived1150GB/snot publishednot publishednot publishedSK hynix 2023 release
HBM3 12-layer 24GBSK hynixHBM3Sampling4/20236.4Gb/s, derived819GB/s12-high24GB16Gb, derivedSK hynix 2023 release
HBM3 Gen2 24GB 8-high (marketed as HBM3E from late 2023)MicronHBM3ESampling2023≥9.2Gb/s≥1200GB/s8-high24GB24GbMicron 2023 releaseMicron 2023 product page
HBM3E 24GB 8-highMicronHBM3EMass production2023≥9.2Gb/s≥1200GB/s8-high24GB24GbMicron 2024 releaseMicron 2023 releaseMicron 2023 product page
HBM3E 36GB 12-high (announced option, sampling planned for Q1 2024)MicronHBM3EAnnounced2023≥9.2Gb/s≥1200GB/s12-high36GB24Gb, derivedMicron 2023 product pageMicron 2023 release
HBM3SK hynixHBM3Mass production6/20226.4Gb/s, derived819GB/snot publishednot publishednot publishedSK hynix 2022 release
HBM3 (24GB and 16GB types)SK hynixHBM3Announced10/20216.4Gb/s, derived819GB/s12-high24GB16Gb, derivedSK hynix 2021 release
HBM2E 16GBSK hynixHBM2EMass production7/20203.6Gb/s≥460GB/s8-high16GB16GbSK hynix 2020 release
HBM2E 16GB FlashboltSamsungHBM2EAnnounced2/20203.2Gb/s410GB/s8-high16GB16GbSamsung 2020 release
HBM2E 16GB (development announced)SK hynixHBM2EAnnounced8/20193.6Gb/s≥460GB/s8-high16GB16GbSK hynix 2019 release
HBM2 8GB AquaboltSamsungHBM2Mass production1/20182.4Gb/s307GB/s8-high8GB8GbSamsung 2018 release
HBM2 2GB 2-high (line-up slide)SK hynixHBM2Announced8/20162Gb/s256GB/s2-high2GB8Gb, derivedSK hynix 2016 product page
HBM2 4GB 4-high (line-up slide)SK hynixHBM2Announced8/20162Gb/s256GB/s4-high4GB8Gb, derivedSK hynix 2016 product page
HBM2 8GB 8-high (line-up slide)SK hynixHBM2Announced8/20162Gb/s256GB/s8-high8GB8Gb, derivedSK hynix 2016 product page
HBM2 4GB (later called Flarebolt)SamsungHBM2Mass production1/20162Gb/s, derived256GB/s4-high4GB8GbSamsung 2016 release
HBM 4-high (development; co-developed with AMD)SK hynixHBMAnnounced12/20131Gb/s128GB/s4-highnot publishednot publishedSK hynix 2013 releaseThe first TSV-stacked HBM. SK hynix built it with AMD, and AMD put HBM on its Fiji GPUs in 2015.

Each value links to the source it was read from. Die is the density of one DRAM die in the stack. The Note column is a short remark on an unusual stack, from the sources in its row. On a phone, swipe the table sideways to see every column.

Download the stacks and accelerators and their sources: CSV or JSON. Each row is one sourced value with the source it was read from, and the D and T marks as columns.

Accelerators that used HBM

Each accelerator sits at the date of its announcement, dated by the vendor's own release, and is drawn at the total memory bandwidth the vendor states for the product, in TB/s. It is a different number from the stack chart: it adds every stack on the package, so a part with more stacks can beat one with a faster stack.

Accelerator memory bandwidth climbed from 0.51TB/s in 2015 to 19.2TB/s in 2026

Accelerator memory bandwidth runs from 0.51TB/s (2015) to 19.2TB/s (2026) across 15 accelerators.
  • Record: the most bandwidth any accelerator had by then
  • NVIDIA
  • AMD
  • Intel and Habana

10 records, oldest first. Each accelerator had more memory bandwidth than any announced before it.

  1. 0.51TB/s

    AMD Radeon R9 Fury X (Fiji)

    Maker
    AMD
  2. 0.72TB/s

    NVIDIA Tesla P100

    Maker
    NVIDIA
  3. 0.9TB/s

    NVIDIA Tesla V100

    Maker
    NVIDIA
  4. 1.55TB/s

    NVIDIA A100 40GB

    Maker
    NVIDIA
  5. 3.2TB/s

    AMD Instinct MI250X

    Maker
    AMD
  6. 3.35TB/s

    NVIDIA H100 SXM5

    Maker
    NVIDIA
  7. 4.8TB/s

    NVIDIA H200

    Maker
    NVIDIA
  8. 5.3TB/s

    AMD Instinct MI300X

    Maker
    AMD
  9. 8TB/s

    NVIDIA B200

    Maker
    NVIDIA
  10. 19.2TB/s

    NVIDIA Rubin GPU

    Maker
    NVIDIA

Every accelerator and its source

Vendor
HBM generation
AcceleratorVendorAnnouncedHBMStacksMemoryBandwidthSource
Rubin GPUNVIDIA1/2026HBM4not published288GB19.2TB/sNVIDIA Newsroom 2026 releaseNVIDIA 2026 product page
Instinct MI355XAMD6/2025HBM3E8288GB8TB/sAMD 2025 releaseAMD 2026 product page
Instinct MI325XAMD10/2024HBM3E8256GB6TB/sAMD 2024 releaseAMD 2025 product page
Gaudi 3Intel4/2024HBM2E8128GB3.7TB/sIntel 2024 releaseIntel 2024 product page
B200NVIDIA3/2024HBM3Enot published180GB8TB/sNVIDIA Newsroom 2024 releaseNVIDIA 2026 product page
Instinct MI300XAMD12/2023HBM38192GB5.3TB/sAMD 2023 release
H200NVIDIA11/2023HBM3Enot published141GB4.8TB/sNVIDIA Newsroom 2023 release
H100 SXM5NVIDIA3/2022HBM3580GB3.35TB/sNVIDIA Technical Blog 2022 releaseNVIDIA 2026 product page
Instinct MI250XAMD11/2021HBM2Enot published128GB3.2TB/sAMD 2021 release
Instinct MI100AMD11/2020HBM2432GB1.23TB/sAMD 2020 releaseAMD 2026 product page
A100 40GBNVIDIA5/2020HBM2540GB1.55TB/sNVIDIA Technical Blog 2020 release
Tesla V100NVIDIA5/2017HBM2416GB0.9TB/sNVIDIA Newsroom 2017 releaseNVIDIA 2017 product pageNVIDIA Newsroom 2017 release
Tesla P100NVIDIA4/2016HBM2416GB0.72TB/sNVIDIA Technical Blog 2016 release
Radeon R9 Nano (Fiji)AMD8/2015HBMnot published4GB0.51TB/sAMD 2015 release
Radeon R9 Fury X (Fiji)AMD6/2015HBMnot published4GB0.51TB/sAMD 2015 releaseAMD 2015 paper

Memory and bandwidth are the vendor's figures for the accelerator package as announced or listed on its product page; the announcement date comes from a dated release, which is the first source listed in each row.

JEDEC revisions behind the dashed line

Each revision is dated by JEDEC's own first publication of it, from its public page or press release.

Research papers and makers’ speeds

What the newest research chips reached on a bench, and the most each maker lists for a part it sells. Neither is a measured product, so neither is drawn on the chart above.

2 ISSCC papers, 2023 to 20262 rows

Newest first. Each speed is the one printed in the paper’s title, because the full papers are behind a paywall, and a title does not say what the speed was measured on. The bar compares a paper only with others in the same unit.

Makers’ listed speeds2 rows

Quoted from each maker’s product page, with the generation the page names. An “up to” speed is a ceiling the maker chose, not what a part delivers in a computer, and the pages carry no date, so none is shown. SK hynix’s product pages could not be read, so no SK hynix speed is listed.

MakerGenerationListed asSpeed
SamsungHBM4“up to 13 Gbps”13 Gbps
SK hynixHBM3E“maximum per-pin data rate is 9.6Gbps”9.6 Gbps

What it will not tell you

A stack sits at the date of its release, not the date it shipped in volume. Vendors do not all publish the same numbers, so a stack with no stated bandwidth is not on that chart even when its pin speed is. The standard line follows the JEDEC revisions that have a public page.

Custom HBM outside the JEDEC line is not charted either. NVIDIA’s NVHBM, announced in August 2026 for NVLink Fusion partners, moves NVIDIA’s memory controller into the HBM base die. NVIDIA claims up to 30% more memory bandwidth, 15% lower HBM power and up to 25% more free compute-die area than standard HBM4E, but it states no stack bandwidth or capacity to plot.

For the physical build of a stack, the layers, the base die and the thermal path, see HBM in the Atlas. For how stacks are joined to the processor, see CoWoS in full and the rest of advanced packaging. The other timelines are on the timelines page.

The guides behind this data

The other timelines