Part 1
SRAM and the Processor Cache
How a six-transistor SRAM cell holds a bit, why it is fast, large and leaky, and why processor caches are built from it, some on a stacked die.
Read Part 1Technical guide
The memory a processor reads and writes while it runs, from the SRAM cache on the die to the HBM stack beside it.
A series on working memory, in six parts. Part 1 opens the SRAM cell and the processor cache built from it. Part 2 opens one DRAM cell and follows it out to a DIMM, a phone and a graphics card. Part 3 looks at the cells that could follow DRAM and what refresh costs. Part 4 stacks DRAM dies beside the processor as High Bandwidth Memory. Part 5 maps the DDR5, LPDDR, GDDR and HBM parts that ship today, and Part 6 covers the CAMM2, LPCAMM2 and SOCAMM2 modules they ship on. The memory map places these memories beside flash and the others; the non-volatile memories are in Beyond NAND, and the memory built for SI in Memory and Storage for SI.
The series
Each part builds on the one before, so start with Part 1.
Part 1
How a six-transistor SRAM cell holds a bit, why it is fast, large and leaky, and why processor caches are built from it, some on a stacked die.
Read Part 1Part 2
How a DRAM cell is read and refreshed, how banks and ranks organize it, what DDR timing numbers measure, and how one cell serves three buses.
Read Part 2Part 3
Why the DRAM cell is hard to shrink, what refresh costs, and what capacitorless, stacked and ferroelectric cells trade, with labs kept apart from roadmaps.
Read Part 3Part 4
What an HBM stack is, why its bus is wide rather than fast, why the chip edge limits bandwidth, and how a stack differs from a DIMM and from a new cell.
Read Part 4Part 5
A sourced guide to the DRAM chips in use now: DDR5, LPDDR5X, GDDR7 and HBM3E and HBM4, what is shipping, what is only sampling, and what is still research.
Read Part 5Part 6
What CAMM2, LPCAMM2, and SOCAMM2 are, the JEDEC standards behind them, how they differ from SO-DIMMs and soldered LPDDR, and who makes them.
Read Part 6Part 7
How CXL memory works: the three device types, what each release from 1.0 to 4.0 added, how the OS sees it, and the modules and controllers on sale.
Read Part 7Short on time
Each card jumps to the section of a guide that answers it.
The Read Cycle: Share, Sense, Restore Refresh Is a Row Operation
Why 1T1C Is Hard to Shrink What Refresh Costs What Each Candidate Trades
Memory in the data
The same records the timelines chart. Every point links to the paper, release or datasheet it came from.
SDR, DDR, LPDDR and GDDR dies by vendor, dated by the earliest public source, with the JEDEC DDR data rate line and every value linked.
Try this: Switch to data rate, watch the JEDEC line step up, then click a die to see the release or datasheet behind it.
Open DRAM Die TimelineHBM stacks by vendor and the accelerators that used them, charted by the date of the earliest public source, with the JEDEC standard line and each value linked.
Try this: Compare stack bandwidth by vendor, then see which accelerators used each generation.
Open HBM TimelineFirsts
The earliest charted part to meet each test, dated by the earliest public source cited for it. It is not a claim about the whole industry.
First DDR2 die, 2003
0.11-micron 1Gb DDR2 (development completed)Announced
First DDR3 die, 2007
78nm 1Gb DDR3 (evaluation samples)Sampling
80nm 1Gb DDR3 (first Intel validation)Announced
First DDR4 die, 2011
30nm-class 2Gb DDR4 (developed)Announced
First HBM accelerator, 2015
AMD Radeon R9 Fury X (Fiji)
First HBM2 stack, 2016
Samsung HBM2 4GB (later called Flarebolt)Mass production
Source: Samsung Begins Mass Producing World's Fastest DRAM, Based on Newest HBM Interface (4GB HBM2)
First GDDR6 die, 2018
10nm-class 16Gb GDDR6 (mass production)Mass production
First LPDDR5 die, 2018
10nm-class 8Gb LPDDR5 (development)Announced
First DDR5 die, 2018
1Ynm 16Gb DDR5 (developed; RDIMM and UDIMM supplied to a chipset maker)Announced
First HBM2E stack, 2019
SK hynix HBM2E 16GB (development announced)Announced
Source: SK hynix Develops World's Fastest High Bandwidth Memory, HBM2E
First HBM3 stack, 2021
SK hynix HBM3 (24GB and 16GB types)Announced
First DRAM die at 24 Gbit or more, 2021
1anm 24Gb DDR5 (samples shipped)Sampling
Source: SK hynix becomes the Industry’s First to Ship 24Gb DDR5 Samples
First GDDR7 die, 2023
16Gb GDDR7 (development)Announced
First DRAM die at 32 Gbit or more, 2023
12nm-class 32Gb DDR5 (development)Announced
First HBM4 stack, 2025
SK hynix HBM4 12-layer 36GBSampling
Source: SK hynix Ships World's First 12-Layer HBM4 Samples to Customers
First HBM4E stack, 2026
Samsung HBM4E 12-layer 48GB (samples)Sampling
Source: Samsung Electronics Begins Shipment of Industry-First HBM4E Samples (29 May 2026)
The timelines page marks these on one strip with the storage firsts, and filters every record by maker and era. Open the timelines
Hands-on
The guides link these tools where they explain something you can try yourself.
Try this: Scroll through the five presets, from one die to a mismatched controller and die, and watch which of the three bars is lowest.
OpenContinue on this site