Weekly recap cover, week ending August 14, 2026A 3D NAND word line staircase with channel holes through it, the lead topic of the week ending August 14, 2026; below it, one drawing for each topic the week covered: NAND flash (1), Market and earnings (3), Research papers (5).THE WEEK IN MEMORY AND STORAGEWEEK ENDINGAugust 142026LEAD · NAND FLASH135

Week endingFriday, August 14, 2026Covers August 8 to August 14, 2026 · 9 items

Kioxia and Sandisk Show a New QLC Generation, and Sandisk Sets Its Long Term Plan

A quiet week after the Future of Memory and Storage show, with the company news dominated by Sandisk. Sandisk and Kioxia unveiled a ninth generation QLC flash technology built for AI storage, and a day later Sandisk used its investor day to lay out strategy and a multi year financial model through fiscal 2030. Phison published its second quarter results and Micron launched a new venture fund aimed at AI companies.

On the research side, high bandwidth flash drew the most attention, with several papers testing how it would work for language model serving. Another paper measured how read disturbance hurts SSD performance across drives from ten makers. Silicon Motion also introduced a reference design kit for enterprise SSDs aimed at AI agent workloads.

Top stories

The rest of the week

Market and earnings

Research papers

  1. Study measures how read disturbance affects performance in modern SSDs (opens in a new tab)

    Researchers tested drives from ten vendors and show read disturbance can slow system level I/O. They also demonstrate an attack that degrades other processes by exploiting it.

    arXiv ·

  2. Paper proposes feeding mixture of experts models from high bandwidth flash by two routes (opens in a new tab)

    The design sends expert weights from flash to the GPU directly and also through the HBM base die, aiming to raise delivery bandwidth for large language model serving.

    arXiv ·

  3. Paper weighs the benefits and limits of high bandwidth flash for language model inference (opens in a new tab)

    The authors find the flash can raise batch size and throughput, but only if it sustains read bandwidth close to HBM and its endurance improves.

    arXiv ·

  4. Study finds high bandwidth flash can slow KV cache serving if dropped in as an SSD (opens in a new tab)

    The paper measures a flash tier built from high bandwidth flash under production traces and finds that transient KV cache traffic, mostly writes, defeats the benefit unless placement is reuse aware.

    arXiv ·

  5. NITRO keeps activations in DRAM so NAND based in storage inference avoids slow writes (opens in a new tab)

    The architecture buffers intermediate values in a fast DRAM subsystem and keeps static weights in dense TLC flash, which targets the long program time of NAND.

    arXiv ·