3 facts filed under Cell physics: all 3 are reported by a second source. Each was checked against the source’s own words, so its figures appear there, and each names where it comes from. The idea is taught in Part 2, The Physics of Flash.
Secondary sources
Silicon nanocrystal memories gave a smaller Vt shift and left percolation paths between source and drain.
A charge-trap memory stores charge in a nitride layer between a tunnel oxide and a blocking oxide, with no capacitive interference between neighboring cells.
Trade press reported that Freescale proved a 24-Mbit silicon-nanocrystal memory array at its Austin fab, aimed at competing with embedded NOR flash.
Sources
Primary is the original paper, standard or datasheet. Secondary is a review, a vendor summary or a news report. Measured is my own test data.
Show all 2 sources
- SecondarySemiconductor Memories and SystemsWoodhead Publishing (Elsevier), 2022
- SecondaryFreescale demos 24-Mbit nanocrystal memorySemiconductor Digest