3 facts filed under Array organization: 2 read in the original source and 1 reported by a second source. Each was checked against the source’s own words, so its figures appear there, and each names where it comes from. The idea is taught in Part 3, From Cell to Die.
Primary sources
A Toshiba NAND patent describes the NAND cell unit as eight floating-gate MOSFETs in series between two select transistors, and says the series circuit consists of four, eight or sixteen such transistors.
Samsung V-NAND, the first 3D NAND product, used 24 stacked wordline layers in its first generation.
Secondary sources
NAND strings come in 32, 64 or 128 cells with a source and a bitline select transistor.
Sources
Primary is the original paper, standard or datasheet. Secondary is a review, a vendor summary or a news report. Measured is my own test data.
Show all 3 sources, 2 primary
- PrimaryUS5657270A - Electrically erasable programmable read-only memory with threshold value controller for data programmingGoogle Patents, 1995
- SecondaryInside Solid State Drives (SSDs), Second EditionSpringer, 2018
- PrimaryThree-Dimensional 128 Gb MLC Vertical NAND Flash Memory With 24-WL Stacked Layers and 50 MB/s High-Speed ProgrammingIEEE Journal of Solid-State Circuits, vol. 50, no. 1 (IEEE Xplore), 2015