Layer Counts / Eyes on Flash

7 facts filed under 3D structure and process: 2 read in the original source and 5 reported by a second source. Each was checked against the source’s own words, so its figures appear there, and each names where it comes from. The idea is taught in Part 4, 3D NAND Stacking.

Primary sources

The first 24-layer 3D NAND stacks arrived in 2013.
Maker claimFigures: 24 layers, 2013Samsung Electronics Starts Mass Production of Industry First 3-bit 3D V-NAND Flash Memory
Samsung introduced its first generation V-NAND (24-layer cells) in August 2013 and its second generation V-NAND (32-layer) cell array structure in May 2014.
Maker claimFigures: 24, 32 layersSamsung Electronics Starts Mass Production of Industry First 3-bit 3D V-NAND Flash Memory

Secondary sources

Samsung announced the first mass-produced 3D V-NAND in 2013; the first part was a 24-layer 128Gb MLC die.
Published resultFigures: 24 layers, 2013Charge-Trapping Non-Volatile Memories
The first 3D NAND products announced were 32 layers with floating gate (Micron and Intel) and 48 layers with charge trap (Toshiba and SK hynix).
Published resultFigures: 32, 48 layers3D Flash Memories
Samsung’s first-generation V-NAND stack has 24 wordline layers.
Published resultFigures: 24 layers3D Flash Memories
Samsung’s first V-NAND string has 24 wordlines, 2 dummy wordlines and 2 select wordlines.
Published resultFigures: 24+2+2Charge-Trapping Non-Volatile Memories
Samsung’s first V-NAND reached a program throughput of more than 36MB/s, or even 50MB/s.
Published resultCharge-Trapping Non-Volatile Memories

Sources

Primary is the original paper, standard or datasheet. Secondary is a review, a vendor summary or a news report. Measured is my own test data.

Show all 3 sources, 1 primary

PrimarySamsung Electronics Starts Mass Production of Industry First 3-bit 3D V-NAND Flash MemorySamsung Newsroom, 2014
SecondaryCharge-Trapping Non-Volatile MemoriesSpringer, 2015
Secondary3D Flash MemoriesSpringer, 2016