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    Cell physics

    Fowler-Nordheim Tunneling

    4 sourced facts on Fowler-Nordheim Tunneling, each tied to the source it comes from.

    4 facts filed under Cell physics: 1 read in the original source and 3 reported by a second source. Each was checked against the source’s own words, so its figures appear there, and each names where it comes from. The idea is taught in Part 2, The Physics of Flash.

    Primary sources

    • Charge-pump paragraph: the wordline needs roughly 15 to 25V.

      Published resultFigures: 14-15V up to 25VInside NAND Flash Memories

    Secondary sources

    • Program fields are on the order of 10MV/cm.

      Published resultFigures: about 10MV/cmInside NAND Flash Memories

    • Lenzlinger and Snow published their measurement of Fowler-Nordheim tunneling into thermally grown silicon dioxide in 1969.

      Published resultCharge-Trapping Non-Volatile Memories

    • Planar erase raises the cell P-well to about 20V while every wordline is at 0V, so no negative voltage is needed.

      Published resultSemiconductor Memories and Systems

    Sources

    Primary is the original paper, standard or datasheet. Secondary is a review, a vendor summary or a news report. Measured is my own test data.

    Show all 3 sources, 1 primary
    • PrimaryInside NAND Flash MemoriesSpringer, 2010
    • SecondaryCharge-Trapping Non-Volatile MemoriesSpringer, 2015
    • SecondarySemiconductor Memories and SystemsWoodhead Publishing (Elsevier), 2022