4 facts filed under Reliability mechanisms: 1 read in the original source and 3 reported by a second source. Each was checked against the source’s own words, so its figures appear there, and each names where it comes from. The idea is taught in Part 2, The Physics of Flash.
Primary sources
Sensing data at a temperature different from the one used during programming is a source of a large number of failed bits in NAND Flash (the cross-temperature effect).
Secondary sources
In one published MLC design a cell threshold moved about 1.5mV per degree, roughly 200mV from -40 to 90°C.
Reading colder than the cell was programmed shifts Vt up; reading hotter shifts it down.
An MLC cell’s Vt shifts about -1.5mV per degree C, roughly 200mV across -40 to 90C.
Sources
Primary is the original paper, standard or datasheet. Secondary is a review, a vendor summary or a news report. Measured is my own test data.
Show all 3 sources, 1 primary
- SecondaryInside NAND Flash MemoriesSpringer, 2010
- SecondarySemiconductor Memories and SystemsWoodhead Publishing (Elsevier), 2022
- PrimaryCross-Temperature Effects of Program and Read Operations in 2D and 3D NAND Flash MemoriesIEEE IIRW 2018, 2018