4 facts filed under 3D structure and process: 1 read in the original source and 3 reported by a second source. Each was checked against the source’s own words, so its figures appear there, and each names where it comes from. The idea is taught in Part 4, 3D NAND Stacking.
Primary sources
The last planar generations were 15nm and 16nm parts from Toshiba and SanDisk, Samsung, SK hynix and Micron. TechInsights: Micron first (Feb 2014), SK hynix Oct 2014, then Samsung 16nm and Toshiba 15nm.
Secondary sources
Samsung first V-NAND: honeycomb holes at 160 nm pitch, about 120 nm across at the top, bitlines at 20 nm half-pitch.
Samsung’s first V-NAND: channel-hole pitch of 160nm, a large top diameter of about 120nm, and metal bitlines at a 20nm half-pitch.
V-NAND uses a honeycomb (hexagonal) layout of channel holes, which maximizes the hole density.
Sources
Primary is the original paper, standard or datasheet. Secondary is a review, a vendor summary or a news report. Measured is my own test data.
Show all 2 sources, 1 primary
- PrimaryTechInsights: Inside 1X nm Planar NAND ...
- SecondaryCharge-Trapping Non-Volatile MemoriesSpringer, 2015