Samsung Electronics announced on September 8 that it will become the first industry participant to integrate High-NA Extreme Ultraviolet (EUV) lithography equipment from ASML into advanced DRAM manufacturing facilities by 2028. This strategic expansion of cooperation is designed to overcome the physical limits of current DRAM scaling, a critical bottleneck as AI hardware upgrades drive surging demand for high-density memory. By adopting this next-generation lithography, Samsung aims to print finer and more precise circuit patterns, directly addressing the need for higher performance density in advanced computing applications.
NA 0.55 vs 0.33 for DRAM scaling
The technical core of this advancement lies in the numerical aperture (NA) of the lithography optics. High-NA systems feature an NA of 0.55, compared to the 0.33 NA of current Low-NA EUV equipment. This improved light-gathering capability allows for significantly finer patterning, which is essential for extending the DRAM roadmap. Samsung plans to leverage this ultra-fine patterning to simplify circuit-forming processes and improve overall productivity, effectively pushing the boundaries of what is possible in memory cell density and performance.
300mm photomasks eliminate stitching
A major operational hurdle in High-NA lithography is the reduced exposure field, which traditionally necessitates a complex process called stitching to connect separately exposed sections of a chip. To solve this, Samsung is joining a large-mask consortium led by ASML to standardize the transition from 150mm (6-inch) to 300mm (12-inch) photomasks. This shift eliminates the stitching constraint, reducing process steps and manufacturing complexity. For storage and memory readers, this means higher yield and lower production costs, which are key metrics for maintaining supply stability in a market increasingly dominated by AI infrastructure needs.
OpenAI and Samsung AI chip R&D
This lithography push is part of a broader strategy to secure Samsung’s position in the AI memory market. While the High-NA EUV integration targets the manufacturing process, Samsung is simultaneously deepening its cooperation with OpenAI for next-generation chip development. OpenAI Korea General Manager Harrison Kim noted that as AI hardware upgrades, the demand for memory chips will increase, making cooperation with Korean semiconductor suppliers a priority. This dual approach - advancing the manufacturing technology while securing major AI customers - solidifies Samsung’s dependency on advanced lithography tools to meet the escalating requirements of the AI ecosystem (TechNews).
HBM shortage and AI demand pressure
The urgency of this technological leap is underscored by the current global HBM shortage and the resulting price volatility. With US export controls tightening, Chinese manufacturers are relying on gray markets for advanced HBM, leading to price increases of up to 50% for chips like Huawei’s Ascend 950DT. This cost pressure highlights the critical importance of maintaining a robust and efficient supply chain for advanced memory. Samsung’s move to adopt High-NA EUV and 300mm masks is a direct response to these market dynamics, aiming to ensure that future memory supply can keep pace with the insatiable demand from AI data centers and high-performance computing.