Samsung Electronics announced a major technological roadmap update, detailing plans to integrate ASML’s High NA extreme ultraviolet (EUV) lithography into High-Volume Manufacturing (HVM) for DRAM by 2028. This move, described by the two companies as the first such industry deployment, is designed to maintain the memory sector’s leading edge amid escalating AI demand. In parallel with the EUV adoption, Samsung is joining the industry effort to transition from the decades-old 6-inch photomask standard to a larger 12-inch format.
High-NA EUV for DRAM by 2028
The technical necessity for these advancements stems from the need to simplify complex scaling processes. High NA increases the numerical aperture of the projection optics from 0.33 to 0.55, enabling tighter resolution and simplifying process steps that previously required multiple patterning passes. Furthermore, the shift to 12-inch photomasks is critical because High NA systems utilize anamorphic optics that halve the exposure field; using a 6-inch reticle would require stitching two exposures, a constraint the larger format is expected to remove.
12-inch photomask transition
Industry partners anticipate that the 12-inch format will significantly raise fab productivity, lower chipmaking costs, and allow manufacturers to utilize High NA without throughput penalties. Beyond the lithography roadmap, Samsung also highlighted its commitment to the AI sector, announcing a strategic partnership with Mistral AI to run the French developer’s models on-premises across its chip operations, alongside a lead investment in Mistral’s Series D round.
DRAM scaling roadmap extension
The planned adoption of High NA EUV for DRAM HVM by 2028 represents a critical inflection point for memory capacity planning and scaling. From a technical standpoint, the transition from 6-inch to 12-inch photomasks is not merely an increase in size but a fundamental requirement for maintaining throughput and cost efficiency when using High NA systems. The ability to simplify process steps that previously demanded multiple patterning passes directly extends the DRAM scaling roadmap, which is essential for meeting the exponential memory demands of advanced AI accelerators.
Capital-intensive lithography cycle
For buyers and suppliers, this roadmap signals that the industry is committing to a multi-year, capital-intensive cycle of lithography and mask technology upgrades, solidifying the importance of advanced EUV and mask infrastructure in the semiconductor value chain. This commitment aligns with broader industry trends where memory manufacturers are expanding their share of the high-bandwidth memory (HBM) market and improving foundry process yields to meet the demands of AI infrastructure.
Host published: 2026-09-09T18:23:20+00:00 Samsung High NA EUV DRAM
Set for 2028, With 12-Inch Photomasks and a Mistral AI Series D Lead Samsung Electronics made two moves in two days that both point at the same problem: keeping its memory and foundry lines on the leading edge as AI demand outruns conventional scaling.