{
  "name": "DRAM Die Timeline",
  "url": "https://eyesonflash.com/timelines/dram-die/",
  "creator": "Eyes on Flash",
  "rights": "All rights reserved. Copyright Sean Webster, Eyes on Flash (https://eyesonflash.com). You may read these files and link to them; do not copy, republish or redistribute them without written permission. Each figure comes from the source named on its row.",
  "dateModified": "2026-09",
  "about": "One row per sourced value. Each row names the source it was read from; a value no source publishes has no row. The date is where the timeline places the record: its earliest source, not the date of each value.",
  "columns": [
    "record_type",
    "record_id",
    "label",
    "maker",
    "date",
    "measure",
    "value",
    "unit",
    "bound",
    "derived",
    "teardown",
    "source_id",
    "source_kind",
    "source_title",
    "source_publisher",
    "source_url",
    "source_page"
  ],
  "rows": [
    {
      "record_type": "dram_die",
      "record_id": "skhynix-0p22um-0p125gb-ddr-1999-06",
      "label": "0.22 micron 128Mb DDR (samples; release names the maker HEI)",
      "maker": "SK hynix",
      "date": "1999-06",
      "measure": "density_gbit",
      "value": 0.125,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-pc266a-128m-ddr-1999-06",
      "source_kind": "press",
      "source_title": "HEI HAS RELEASED THE NEWLY STANDARDIZED PC266A 128M DDR SYNCHRONOUS DRAM FOR THE FIRST TIME",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/hei-has-released-the-newly-standardized-pc266a-128m-ddr-synchronous-dram-for-the-first-time/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-0p22um-0p125gb-ddr-1999-06",
      "label": "0.22 micron 128Mb DDR (samples; release names the maker HEI)",
      "maker": "SK hynix",
      "date": "1999-06",
      "measure": "data_rate_product_mts",
      "value": 266,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-pc266a-128m-ddr-1999-06",
      "source_kind": "press",
      "source_title": "HEI HAS RELEASED THE NEWLY STANDARDIZED PC266A 128M DDR SYNCHRONOUS DRAM FOR THE FIRST TIME",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/hei-has-released-the-newly-standardized-pc266a-128m-ddr-synchronous-dram-for-the-first-time/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-0p22um-0p125gb-ddr-1999-06",
      "label": "0.22 micron 128Mb DDR (samples; release names the maker HEI)",
      "maker": "SK hynix",
      "date": "1999-06",
      "measure": "node_class",
      "value": "0.22 micron",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-pc266a-128m-ddr-1999-06",
      "source_kind": "press",
      "source_title": "HEI HAS RELEASED THE NEWLY STANDARDIZED PC266A 128M DDR SYNCHRONOUS DRAM FOR THE FIRST TIME",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/hei-has-released-the-newly-standardized-pc266a-128m-ddr-synchronous-dram-for-the-first-time/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "nanya-ddr-128mb-2001-11",
      "label": "128Mb DDR333 (volume production)",
      "maker": "Nanya",
      "date": "2001-11",
      "measure": "density_gbit",
      "value": 0.125,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "nanya-ddr333-volume-2001-11",
      "source_kind": "press",
      "source_title": "Nanya Announces DDR333 Volume Production",
      "source_publisher": "Nanya Technology",
      "source_url": "https://www.nanya.com/en/IR/16?IRId=231",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "nanya-ddr-128mb-2001-11",
      "label": "128Mb DDR333 (volume production)",
      "maker": "Nanya",
      "date": "2001-11",
      "measure": "data_rate_product_mts",
      "value": 333,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "nanya-ddr333-volume-2001-11",
      "source_kind": "press",
      "source_title": "Nanya Announces DDR333 Volume Production",
      "source_publisher": "Nanya Technology",
      "source_url": "https://www.nanya.com/en/IR/16?IRId=231",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "nanya-ddr-256mb-2001-11",
      "label": "256Mb DDR333 (volume production)",
      "maker": "Nanya",
      "date": "2001-11",
      "measure": "density_gbit",
      "value": 0.25,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "nanya-ddr333-volume-2001-11",
      "source_kind": "press",
      "source_title": "Nanya Announces DDR333 Volume Production",
      "source_publisher": "Nanya Technology",
      "source_url": "https://www.nanya.com/en/IR/16?IRId=231",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "nanya-ddr-256mb-2001-11",
      "label": "256Mb DDR333 (volume production)",
      "maker": "Nanya",
      "date": "2001-11",
      "measure": "data_rate_product_mts",
      "value": 333,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "nanya-ddr333-volume-2001-11",
      "source_kind": "press",
      "source_title": "Nanya Announces DDR333 Volume Production",
      "source_publisher": "Nanya Technology",
      "source_url": "https://www.nanya.com/en/IR/16?IRId=231",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-0p10um-0p5gb-ddr-2002-10",
      "label": "0.10-micron 512Mb DDR (development announced)",
      "maker": "SK hynix",
      "date": "2002-10",
      "measure": "density_gbit",
      "value": 0.5,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-512mb-ddr-0p10um-2002-10",
      "source_kind": "press",
      "source_title": "hynix Develops 0.10-micron 512Mb DDR",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/hynix-develops-0-10-micron-512-mb-ddr/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-0p10um-0p5gb-ddr-2002-10",
      "label": "0.10-micron 512Mb DDR (development announced)",
      "maker": "SK hynix",
      "date": "2002-10",
      "measure": "data_rate_product_mts",
      "value": 400,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-512mb-ddr-0p10um-2002-10",
      "source_kind": "press",
      "source_title": "hynix Develops 0.10-micron 512Mb DDR",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/hynix-develops-0-10-micron-512-mb-ddr/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-0p10um-0p5gb-ddr-2002-10",
      "label": "0.10-micron 512Mb DDR (development announced)",
      "maker": "SK hynix",
      "date": "2002-10",
      "measure": "node_class",
      "value": "0.10-micron",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-512mb-ddr-0p10um-2002-10",
      "source_kind": "press",
      "source_title": "hynix Develops 0.10-micron 512Mb DDR",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/hynix-develops-0-10-micron-512-mb-ddr/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "nanya-014u-256mb-ddr-2003-02",
      "label": "0.14u 256Mb DDR400 (announced)",
      "maker": "Nanya",
      "date": "2003-02",
      "measure": "density_gbit",
      "value": 0.25,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "nanya-ddr400-announce-2003-02",
      "source_kind": "press",
      "source_title": "Nanya Technology Announces DDR400 SDRAM",
      "source_publisher": "Nanya Technology",
      "source_url": "https://www.nanya.com/en/IR/16?IRId=219",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "nanya-014u-256mb-ddr-2003-02",
      "label": "0.14u 256Mb DDR400 (announced)",
      "maker": "Nanya",
      "date": "2003-02",
      "measure": "data_rate_product_mts",
      "value": 400,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "nanya-ddr400-announce-2003-02",
      "source_kind": "press",
      "source_title": "Nanya Technology Announces DDR400 SDRAM",
      "source_publisher": "Nanya Technology",
      "source_url": "https://www.nanya.com/en/IR/16?IRId=219",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "nanya-014u-256mb-ddr-2003-02",
      "label": "0.14u 256Mb DDR400 (announced)",
      "maker": "Nanya",
      "date": "2003-02",
      "measure": "node_class",
      "value": "0.14u",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "nanya-ddr400-announce-2003-02",
      "source_kind": "press",
      "source_title": "Nanya Technology Announces DDR400 SDRAM",
      "source_publisher": "Nanya Technology",
      "source_url": "https://www.nanya.com/en/IR/16?IRId=219",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-unstated-0p25gb-ddr-2003-02",
      "label": "256Mb DDR400 (sample and mass production quantities)",
      "maker": "SK hynix",
      "date": "2003-02",
      "measure": "density_gbit",
      "value": 0.25,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-256mb-ddr400-2003-02",
      "source_kind": "press",
      "source_title": "hynix to Rollout 400Mhz DDR to Coincide Intel Springdale Launch",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/hynix-to-rollout-400mhz-ddr-to-coincide-intel-springdale-launch/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-unstated-0p25gb-ddr-2003-02",
      "label": "256Mb DDR400 (sample and mass production quantities)",
      "maker": "SK hynix",
      "date": "2003-02",
      "measure": "data_rate_product_mts",
      "value": 400,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-256mb-ddr400-2003-02",
      "source_kind": "press",
      "source_title": "hynix to Rollout 400Mhz DDR to Coincide Intel Springdale Launch",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/hynix-to-rollout-400mhz-ddr-to-coincide-intel-springdale-launch/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-0p11um-1gb-ddr2-2003-08",
      "label": "0.11-micron 1Gb DDR2 (development completed)",
      "maker": "SK hynix",
      "date": "2003-08",
      "measure": "density_gbit",
      "value": 1,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-1gb-ddr2-2003-08",
      "source_kind": "press",
      "source_title": "hynix Announces DRAM Industry’s First 1Gb DDR2",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/hynix-announces-dram-industrys-first-1gb-ddr2/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-0p11um-1gb-ddr2-2003-08",
      "label": "0.11-micron 1Gb DDR2 (development completed)",
      "maker": "SK hynix",
      "date": "2003-08",
      "measure": "node_class",
      "value": "0.11-micron",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-1gb-ddr2-2003-08",
      "source_kind": "press",
      "source_title": "hynix Announces DRAM Industry’s First 1Gb DDR2",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/hynix-announces-dram-industrys-first-1gb-ddr2/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-0p11um-0p5gb-ddr2-2003-09",
      "label": "0.11-micron 512Mb DDR2 (samples to Intel)",
      "maker": "SK hynix",
      "date": "2003-09",
      "measure": "density_gbit",
      "value": 0.5,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-512mb-ddr2-samples-2003-09",
      "source_kind": "press",
      "source_title": "hynix Submits 512Mb DDR2 SDRAM Samples to Intel For Evaluation",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/hynix-submits-512mb-ddr2-sdram-samples-to-intel-for-evaluation/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-0p11um-0p5gb-ddr2-2003-09",
      "label": "0.11-micron 512Mb DDR2 (samples to Intel)",
      "maker": "SK hynix",
      "date": "2003-09",
      "measure": "data_rate_product_mts",
      "value": 667,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-512mb-ddr2-samples-2003-09",
      "source_kind": "press",
      "source_title": "hynix Submits 512Mb DDR2 SDRAM Samples to Intel For Evaluation",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/hynix-submits-512mb-ddr2-sdram-samples-to-intel-for-evaluation/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-0p11um-0p5gb-ddr2-2003-09",
      "label": "0.11-micron 512Mb DDR2 (samples to Intel)",
      "maker": "SK hynix",
      "date": "2003-09",
      "measure": "node_class",
      "value": ".11-micron",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-512mb-ddr2-samples-2003-09",
      "source_kind": "press",
      "source_title": "hynix Submits 512Mb DDR2 SDRAM Samples to Intel For Evaluation",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/hynix-submits-512mb-ddr2-sdram-samples-to-intel-for-evaluation/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-80nm-2gb-ddr2-2004-09",
      "label": "80nm 2Gb DDR2 (announced)",
      "maker": "Samsung",
      "date": "2004-09",
      "measure": "density_gbit",
      "value": 2,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-annual-report-2004-sep",
      "source_kind": "press",
      "source_title": "Samsung Electronics Annual Report 2004 (September 2004 entry)",
      "source_publisher": "Samsung Electronics",
      "source_url": "https://images.samsung.com/is/content/samsung/p5/lv/aboutsamsung/about-samsung-2017/reduced-size/2004_E.pdf",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-80nm-2gb-ddr2-2004-09",
      "label": "80nm 2Gb DDR2 (announced)",
      "maker": "Samsung",
      "date": "2004-09",
      "measure": "node_class",
      "value": "80nm",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-annual-report-2004-sep",
      "source_kind": "press",
      "source_title": "Samsung Electronics Annual Report 2004 (September 2004 entry)",
      "source_publisher": "Samsung Electronics",
      "source_url": "https://images.samsung.com/is/content/samsung/p5/lv/aboutsamsung/about-samsung-2017/reduced-size/2004_E.pdf",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "nanya-75nm-512mb-ddr2-2006-09",
      "label": "75nm 512Mb DDR2 (qualified, Qimonda joint development)",
      "maker": "Nanya",
      "date": "2006-09",
      "measure": "density_gbit",
      "value": 0.5,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "nanya-qimonda-75nm-ddr2-2006-09",
      "source_kind": "press",
      "source_title": "Nanya and Qimonda Achieved Successful Qualification of 75nm DRAM Technology",
      "source_publisher": "Nanya Technology and Qimonda",
      "source_url": "https://www.nanya.com/en/IR/16?IRId=193",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "nanya-75nm-512mb-ddr2-2006-09",
      "label": "75nm 512Mb DDR2 (qualified, Qimonda joint development)",
      "maker": "Nanya",
      "date": "2006-09",
      "measure": "node_class",
      "value": "75nm",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "nanya-qimonda-75nm-ddr2-2006-09",
      "source_kind": "press",
      "source_title": "Nanya and Qimonda Achieved Successful Qualification of 75nm DRAM Technology",
      "source_publisher": "Nanya Technology and Qimonda",
      "source_url": "https://www.nanya.com/en/IR/16?IRId=193",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-80nm-1gb-ddr2-2006-09",
      "label": "80nm 1Gb DDR2 (mass production; secondary source)",
      "maker": "Samsung",
      "date": "2006-09",
      "measure": "density_gbit",
      "value": 1,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-eetimes-1gb-ddr2-80nm-2006-09",
      "source_kind": "press",
      "source_title": "Samsung Electronics mass-produces 1Gb DDR2 memory with 80nm process technology",
      "source_publisher": "EE Times (reprint of Samsung Electronics release)",
      "source_url": "https://www.eetimes.com/samsung-electronics-mass-produces-1gb-ddr2-memory-with-80nm-process-technology",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-80nm-1gb-ddr2-2006-09",
      "label": "80nm 1Gb DDR2 (mass production; secondary source)",
      "maker": "Samsung",
      "date": "2006-09",
      "measure": "node_class",
      "value": "80nm",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-eetimes-1gb-ddr2-80nm-2006-09",
      "source_kind": "press",
      "source_title": "Samsung Electronics mass-produces 1Gb DDR2 memory with 80nm process technology",
      "source_publisher": "EE Times (reprint of Samsung Electronics release)",
      "source_url": "https://www.eetimes.com/samsung-electronics-mass-produces-1gb-ddr2-memory-with-80nm-process-technology",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-60nm-1gb-ddr2-2006-12",
      "label": "60nm 1Gb DDR2 (introduced; Intel validated)",
      "maker": "SK hynix",
      "date": "2006-12",
      "measure": "density_gbit",
      "value": 1,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-60nm-1gb-ddr2-2006-12",
      "source_kind": "press",
      "source_title": "hynix Announces Industry’s first 60nm 1Gb DDR2 800MHz based Modules",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/hynix-announces-industrys-first-60nm-1gb-ddr2-800mhz-based-modules/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-60nm-1gb-ddr2-2006-12",
      "label": "60nm 1Gb DDR2 (introduced; Intel validated)",
      "maker": "SK hynix",
      "date": "2006-12",
      "measure": "data_rate_product_mts",
      "value": 800,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-60nm-1gb-ddr2-2006-12",
      "source_kind": "press",
      "source_title": "hynix Announces Industry’s first 60nm 1Gb DDR2 800MHz based Modules",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/hynix-announces-industrys-first-60nm-1gb-ddr2-800mhz-based-modules/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-60nm-1gb-ddr2-2006-12",
      "label": "60nm 1Gb DDR2 (introduced; Intel validated)",
      "maker": "SK hynix",
      "date": "2006-12",
      "measure": "node_class",
      "value": "60nm",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-60nm-1gb-ddr2-2006-12",
      "source_kind": "press",
      "source_title": "hynix Announces Industry’s first 60nm 1Gb DDR2 800MHz based Modules",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/hynix-announces-industrys-first-60nm-1gb-ddr2-800mhz-based-modules/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-60nm-class-1gb-ddr2-2007-03",
      "label": "60nm-class 1Gb DDR2 (mass production)",
      "maker": "Samsung",
      "date": "2007-03",
      "measure": "density_gbit",
      "value": 1,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-annual-report-2007-mar",
      "source_kind": "press",
      "source_title": "Samsung Electronics Annual Report 2007 (March 2007 entry)",
      "source_publisher": "Samsung Electronics",
      "source_url": "https://images.samsung.com/is/content/samsung/p5/lv/aboutsamsung/about-samsung-2017/reduced-size/2007_E.pdf",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-60nm-class-1gb-ddr2-2007-03",
      "label": "60nm-class 1Gb DDR2 (mass production)",
      "maker": "Samsung",
      "date": "2007-03",
      "measure": "node_class",
      "value": "60nm-class",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-annual-report-2007-mar",
      "source_kind": "press",
      "source_title": "Samsung Electronics Annual Report 2007 (March 2007 entry)",
      "source_publisher": "Samsung Electronics",
      "source_url": "https://images.samsung.com/is/content/samsung/p5/lv/aboutsamsung/about-samsung-2017/reduced-size/2007_E.pdf",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-60nm-class-2gb-ddr2-2007-09",
      "label": "60nm-class 2Gb DDR2 (announced)",
      "maker": "Samsung",
      "date": "2007-09",
      "measure": "density_gbit",
      "value": 2,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-annual-report-2007-sep",
      "source_kind": "press",
      "source_title": "Samsung Electronics Annual Report 2007 (September 2007 entry)",
      "source_publisher": "Samsung Electronics",
      "source_url": "https://images.samsung.com/is/content/samsung/p5/lv/aboutsamsung/about-samsung-2017/reduced-size/2007_E.pdf",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-60nm-class-2gb-ddr2-2007-09",
      "label": "60nm-class 2Gb DDR2 (announced)",
      "maker": "Samsung",
      "date": "2007-09",
      "measure": "node_class",
      "value": "60nm-class",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-annual-report-2007-sep",
      "source_kind": "press",
      "source_title": "Samsung Electronics Annual Report 2007 (September 2007 entry)",
      "source_publisher": "Samsung Electronics",
      "source_url": "https://images.samsung.com/is/content/samsung/p5/lv/aboutsamsung/about-samsung-2017/reduced-size/2007_E.pdf",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-50nm-class-1gb-ddr2-2007-11",
      "label": "50nm-class 1Gb DDR2 (Intel validation)",
      "maker": "SK hynix",
      "date": "2007-11",
      "measure": "density_gbit",
      "value": 1,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-50nm-1gb-ddr2-2007-11",
      "source_kind": "press",
      "source_title": "hynix Semiconductor Inc. to Receive Intel Validation for 1Gb DDR2 DRAM",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/hynix-semiconductor-inc-to-receive-intel-validation-for-1gb-ddr2-dram/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-50nm-class-1gb-ddr2-2007-11",
      "label": "50nm-class 1Gb DDR2 (Intel validation)",
      "maker": "SK hynix",
      "date": "2007-11",
      "measure": "node_class",
      "value": "50nm-class",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-50nm-1gb-ddr2-2007-11",
      "source_kind": "press",
      "source_title": "hynix Semiconductor Inc. to Receive Intel Validation for 1Gb DDR2 DRAM",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/hynix-semiconductor-inc-to-receive-intel-validation-for-1gb-ddr2-dram/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-50nm-1gb-ddr2-2008-04",
      "label": "50nm 1Gb DDR2 (mass production)",
      "maker": "Samsung",
      "date": "2008-04",
      "measure": "density_gbit",
      "value": 1,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-annual-report-2008-apr",
      "source_kind": "press",
      "source_title": "Samsung Electronics Annual Report 2008 (April 2008 entry)",
      "source_publisher": "Samsung Electronics",
      "source_url": "https://images.samsung.com/is/content/samsung/p5/lv/aboutsamsung/about-samsung-2017/reduced-size/2008_E.pdf",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-50nm-1gb-ddr2-2008-04",
      "label": "50nm 1Gb DDR2 (mass production)",
      "maker": "Samsung",
      "date": "2008-04",
      "measure": "node_class",
      "value": "50nm",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-annual-report-2008-apr",
      "source_kind": "press",
      "source_title": "Samsung Electronics Annual Report 2008 (April 2008 entry)",
      "source_publisher": "Samsung Electronics",
      "source_url": "https://images.samsung.com/is/content/samsung/p5/lv/aboutsamsung/about-samsung-2017/reduced-size/2008_E.pdf",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-50nm-2gb-ddr2-2010-07",
      "label": "50nm 2Gb DDR2 (announced, sampling planned 9/2010)",
      "maker": "Micron",
      "date": "2010-07",
      "measure": "density_gbit",
      "value": 2,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-ddr2-2gb-50nm-2010-07",
      "source_kind": "press",
      "source_title": "Micron Introduces New Memory Device Supporting Intel Processor-Based Tablets and Netbooks (original investors.micron.com page, web.archive.org copy)",
      "source_publisher": "Micron Technology",
      "source_url": "https://web.archive.org/web/2/https://investors.micron.com/news-releases/news-release-details/micron-introduces-new-memory-device-supporting-intel-processor",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-50nm-2gb-ddr2-2010-07",
      "label": "50nm 2Gb DDR2 (announced, sampling planned 9/2010)",
      "maker": "Micron",
      "date": "2010-07",
      "measure": "node_class",
      "value": "50nm",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-ddr2-2gb-50nm-2010-07",
      "source_kind": "press",
      "source_title": "Micron Introduces New Memory Device Supporting Intel Processor-Based Tablets and Netbooks (original investors.micron.com page, web.archive.org copy)",
      "source_publisher": "Micron Technology",
      "source_url": "https://web.archive.org/web/2/https://investors.micron.com/news-releases/news-release-details/micron-introduces-new-memory-device-supporting-intel-processor",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-78nm-1gb-ddr3-2007-05",
      "label": "78nm 1Gb DDR3 (evaluation samples)",
      "maker": "Micron",
      "date": "2007-05",
      "measure": "density_gbit",
      "value": 1,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-ddr3-1gb-78nm-2007-05",
      "source_kind": "press",
      "source_title": "Micron Technology's DDR3 Memory for High-End Computing is Validated with INTEL Platforms (original investors.micron.com page, web.archive.org copy)",
      "source_publisher": "Micron Technology",
      "source_url": "https://web.archive.org/web/20251204060103/https://investors.micron.com/news-releases/news-release-details/micron-technologys-ddr3-memory-high-end-computing-validated",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-78nm-1gb-ddr3-2007-05",
      "label": "78nm 1Gb DDR3 (evaluation samples)",
      "maker": "Micron",
      "date": "2007-05",
      "measure": "data_rate_product_mts",
      "value": 1066,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-ddr3-1gb-78nm-2007-05",
      "source_kind": "press",
      "source_title": "Micron Technology's DDR3 Memory for High-End Computing is Validated with INTEL Platforms (original investors.micron.com page, web.archive.org copy)",
      "source_publisher": "Micron Technology",
      "source_url": "https://web.archive.org/web/20251204060103/https://investors.micron.com/news-releases/news-release-details/micron-technologys-ddr3-memory-high-end-computing-validated",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-78nm-1gb-ddr3-2007-05",
      "label": "78nm 1Gb DDR3 (evaluation samples)",
      "maker": "Micron",
      "date": "2007-05",
      "measure": "node_class",
      "value": "78nm",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-ddr3-1gb-78nm-2007-05",
      "source_kind": "press",
      "source_title": "Micron Technology's DDR3 Memory for High-End Computing is Validated with INTEL Platforms (original investors.micron.com page, web.archive.org copy)",
      "source_publisher": "Micron Technology",
      "source_url": "https://web.archive.org/web/20251204060103/https://investors.micron.com/news-releases/news-release-details/micron-technologys-ddr3-memory-high-end-computing-validated",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-80nm-1gb-ddr3-2007-05",
      "label": "80nm 1Gb DDR3 (first Intel validation)",
      "maker": "SK hynix",
      "date": "2007-05",
      "measure": "density_gbit",
      "value": 1,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-ddr3-first-validations-2007-05",
      "source_kind": "press",
      "source_title": "hynix Announces Industry’s First DDR3 Validations",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/hynix-announces-industrys-first-ddr3-validations/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-80nm-1gb-ddr3-2007-05",
      "label": "80nm 1Gb DDR3 (first Intel validation)",
      "maker": "SK hynix",
      "date": "2007-05",
      "measure": "data_rate_product_mts",
      "value": 1066,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-ddr3-first-validations-2007-05",
      "source_kind": "press",
      "source_title": "hynix Announces Industry’s First DDR3 Validations",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/hynix-announces-industrys-first-ddr3-validations/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-80nm-1gb-ddr3-2007-05",
      "label": "80nm 1Gb DDR3 (first Intel validation)",
      "maker": "SK hynix",
      "date": "2007-05",
      "measure": "node_class",
      "value": "80nm",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-ddr3-first-validations-2007-05",
      "source_kind": "press",
      "source_title": "hynix Announces Industry’s First DDR3 Validations",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/hynix-announces-industrys-first-ddr3-validations/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-78nm-2gb-ddr3-2007-10",
      "label": "78nm 2Gb DDR3 (sampling modules)",
      "maker": "Micron",
      "date": "2007-10",
      "measure": "density_gbit",
      "value": 2,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-ddr3-2gb-78nm-2007-10",
      "source_kind": "press",
      "source_title": "Micron Introduces Industry's Highest Density DDR3 Components and Modules (original investors.micron.com page, web.archive.org copy)",
      "source_publisher": "Micron Technology",
      "source_url": "https://web.archive.org/web/20251204060051/https://investors.micron.com/news-releases/news-release-details/micron-introduces-industrys-highest-density-ddr3-components-and",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-78nm-2gb-ddr3-2007-10",
      "label": "78nm 2Gb DDR3 (sampling modules)",
      "maker": "Micron",
      "date": "2007-10",
      "measure": "data_rate_product_mts",
      "value": 1333,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-ddr3-2gb-78nm-2007-10",
      "source_kind": "press",
      "source_title": "Micron Introduces Industry's Highest Density DDR3 Components and Modules (original investors.micron.com page, web.archive.org copy)",
      "source_publisher": "Micron Technology",
      "source_url": "https://web.archive.org/web/20251204060051/https://investors.micron.com/news-releases/news-release-details/micron-introduces-industrys-highest-density-ddr3-components-and",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-78nm-2gb-ddr3-2007-10",
      "label": "78nm 2Gb DDR3 (sampling modules)",
      "maker": "Micron",
      "date": "2007-10",
      "measure": "node_class",
      "value": "78nm",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-ddr3-2gb-78nm-2007-10",
      "source_kind": "press",
      "source_title": "Micron Introduces Industry's Highest Density DDR3 Components and Modules (original investors.micron.com page, web.archive.org copy)",
      "source_publisher": "Micron Technology",
      "source_url": "https://web.archive.org/web/20251204060051/https://investors.micron.com/news-releases/news-release-details/micron-introduces-industrys-highest-density-ddr3-components-and",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-50nm-2gb-ddr3-2008-09",
      "label": "50nm 2Gb DDR3 (mass production)",
      "maker": "Samsung",
      "date": "2008-09",
      "measure": "density_gbit",
      "value": 2,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-annual-report-2008-sep",
      "source_kind": "press",
      "source_title": "Samsung Electronics Annual Report 2008 (September 2008 entry)",
      "source_publisher": "Samsung Electronics",
      "source_url": "https://images.samsung.com/is/content/samsung/p5/lv/aboutsamsung/about-samsung-2017/reduced-size/2008_E.pdf",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-50nm-2gb-ddr3-2008-09",
      "label": "50nm 2Gb DDR3 (mass production)",
      "maker": "Samsung",
      "date": "2008-09",
      "measure": "node_class",
      "value": "50nm",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-annual-report-2008-sep",
      "source_kind": "press",
      "source_title": "Samsung Electronics Annual Report 2008 (September 2008 entry)",
      "source_publisher": "Samsung Electronics",
      "source_url": "https://images.samsung.com/is/content/samsung/p5/lv/aboutsamsung/about-samsung-2017/reduced-size/2008_E.pdf",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-66nm-1gb-ddr3-2008-04",
      "label": "66nm 1Gb DDR3 (SO-DIMM validation; component validated 10/2007 per the release)",
      "maker": "SK hynix",
      "date": "2008-04",
      "measure": "density_gbit",
      "value": 1,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-66nm-1gb-ddr3-sodimm-2008-04",
      "source_kind": "press",
      "source_title": "hynix Announces 1066Mbps, 512MB/1GB/2GB DDR3 SO-DIMM Validation",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/hynix-announces-1066mbps-512mb-1gb-2gb-ddr3-so-dimm-validation/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-66nm-1gb-ddr3-2008-04",
      "label": "66nm 1Gb DDR3 (SO-DIMM validation; component validated 10/2007 per the release)",
      "maker": "SK hynix",
      "date": "2008-04",
      "measure": "data_rate_product_mts",
      "value": 1066,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-66nm-1gb-ddr3-sodimm-2008-04",
      "source_kind": "press",
      "source_title": "hynix Announces 1066Mbps, 512MB/1GB/2GB DDR3 SO-DIMM Validation",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/hynix-announces-1066mbps-512mb-1gb-2gb-ddr3-so-dimm-validation/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-66nm-1gb-ddr3-2008-04",
      "label": "66nm 1Gb DDR3 (SO-DIMM validation; component validated 10/2007 per the release)",
      "maker": "SK hynix",
      "date": "2008-04",
      "measure": "node_class",
      "value": "66nm",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-66nm-1gb-ddr3-sodimm-2008-04",
      "source_kind": "press",
      "source_title": "hynix Announces 1066Mbps, 512MB/1GB/2GB DDR3 SO-DIMM Validation",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/hynix-announces-1066mbps-512mb-1gb-2gb-ddr3-so-dimm-validation/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-54nm-1gb-ddr3-2009-10",
      "label": "54nm 1Gb DDR3 second generation (mass production)",
      "maker": "SK hynix",
      "date": "2009-10",
      "measure": "density_gbit",
      "value": 1,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-54nm-1gb-ddr3-2009-10",
      "source_kind": "press",
      "source_title": "hynix Introduces the Second Generation 1Gb DDR3",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/hynix-introduces-the-second-generation-1gb-ddr3/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-54nm-1gb-ddr3-2009-10",
      "label": "54nm 1Gb DDR3 second generation (mass production)",
      "maker": "SK hynix",
      "date": "2009-10",
      "measure": "node_class",
      "value": "54nm",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-54nm-1gb-ddr3-2009-10",
      "source_kind": "press",
      "source_title": "hynix Introduces the Second Generation 1Gb DDR3",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/hynix-introduces-the-second-generation-1gb-ddr3/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-40nm-class-2gb-ddr3-2009-11",
      "label": "40nm-class 2Gb DDR3 (Intel validation, mass production begun)",
      "maker": "SK hynix",
      "date": "2009-11",
      "measure": "density_gbit",
      "value": 2,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-40nm-2gb-ddr3-2009-11",
      "source_kind": "press",
      "source_title": "hynix Announces the Intel Validation of 40nm Class 2Gb DDR3 Products",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/hynix-announces-the-intel-validation-of-40nm-class-2gb-ddr3-products/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-40nm-class-2gb-ddr3-2009-11",
      "label": "40nm-class 2Gb DDR3 (Intel validation, mass production begun)",
      "maker": "SK hynix",
      "date": "2009-11",
      "measure": "data_rate_product_mts",
      "value": 1333,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-40nm-2gb-ddr3-2009-11",
      "source_kind": "press",
      "source_title": "hynix Announces the Intel Validation of 40nm Class 2Gb DDR3 Products",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/hynix-announces-the-intel-validation-of-40nm-class-2gb-ddr3-products/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-40nm-class-2gb-ddr3-2009-11",
      "label": "40nm-class 2Gb DDR3 (Intel validation, mass production begun)",
      "maker": "SK hynix",
      "date": "2009-11",
      "measure": "node_class",
      "value": "40nm class",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-40nm-2gb-ddr3-2009-11",
      "source_kind": "press",
      "source_title": "hynix Announces the Intel Validation of 40nm Class 2Gb DDR3 Products",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/hynix-announces-the-intel-validation-of-40nm-class-2gb-ddr3-products/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "nanya-42nm-2gb-ddr3-2010-02",
      "label": "42nm 2Gb DDR3 (joint Micron and Nanya)",
      "maker": "Nanya",
      "date": "2010-02",
      "measure": "density_gbit",
      "value": 2,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-nanya-42nm-2gb-ddr3-2010-02",
      "source_kind": "press",
      "source_title": "MICRON, NANYA UNVEIL 42-NANOMETER DRAM PROCESS TECHNOLOGY - REDUCES MEMORY POWER CONSUMPTION, INCREASES PERFORMANCE",
      "source_publisher": "Micron Technology and Nanya Technology",
      "source_url": "https://www.nanya.com/en/IR/16?IRId=116",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "nanya-42nm-2gb-ddr3-2010-02",
      "label": "42nm 2Gb DDR3 (joint Micron and Nanya)",
      "maker": "Nanya",
      "date": "2010-02",
      "measure": "data_rate_product_mts",
      "value": 1866,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-nanya-42nm-2gb-ddr3-2010-02",
      "source_kind": "press",
      "source_title": "MICRON, NANYA UNVEIL 42-NANOMETER DRAM PROCESS TECHNOLOGY - REDUCES MEMORY POWER CONSUMPTION, INCREASES PERFORMANCE",
      "source_publisher": "Micron Technology and Nanya Technology",
      "source_url": "https://www.nanya.com/en/IR/16?IRId=116",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "nanya-42nm-2gb-ddr3-2010-02",
      "label": "42nm 2Gb DDR3 (joint Micron and Nanya)",
      "maker": "Nanya",
      "date": "2010-02",
      "measure": "node_class",
      "value": "42nm",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-nanya-42nm-2gb-ddr3-2010-02",
      "source_kind": "press",
      "source_title": "MICRON, NANYA UNVEIL 42-NANOMETER DRAM PROCESS TECHNOLOGY - REDUCES MEMORY POWER CONSUMPTION, INCREASES PERFORMANCE",
      "source_publisher": "Micron Technology and Nanya Technology",
      "source_url": "https://www.nanya.com/en/IR/16?IRId=116",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-20nm-class-4gb-ddr3-2012-02",
      "label": "20nm-class 4Gb DDR3 (shown at MWC, volume production planned 1H 2012)",
      "maker": "SK hynix",
      "date": "2012-02",
      "measure": "density_gbit",
      "value": 4,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-20nm-4gb-ddr3-mwc-2012-02",
      "source_kind": "press",
      "source_title": "hynix Semiconductor Introduces Smart Mobile Solutions at Mobile World Congress",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/hynix-semiconductor-introduces-smart-mobile-solutions-at-mobile-world-congress",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-20nm-class-4gb-ddr3-2012-02",
      "label": "20nm-class 4Gb DDR3 (shown at MWC, volume production planned 1H 2012)",
      "maker": "SK hynix",
      "date": "2012-02",
      "measure": "data_rate_product_mts",
      "value": 2133,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-20nm-4gb-ddr3-mwc-2012-02",
      "source_kind": "press",
      "source_title": "hynix Semiconductor Introduces Smart Mobile Solutions at Mobile World Congress",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/hynix-semiconductor-introduces-smart-mobile-solutions-at-mobile-world-congress",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-20nm-class-4gb-ddr3-2012-02",
      "label": "20nm-class 4Gb DDR3 (shown at MWC, volume production planned 1H 2012)",
      "maker": "SK hynix",
      "date": "2012-02",
      "measure": "node_class",
      "value": "20nm class",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-20nm-4gb-ddr3-mwc-2012-02",
      "source_kind": "press",
      "source_title": "hynix Semiconductor Introduces Smart Mobile Solutions at Mobile World Congress",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/hynix-semiconductor-introduces-smart-mobile-solutions-at-mobile-world-congress",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-20nm-4gb-ddr3-2014-03",
      "label": "20nm 4Gb DDR3 (mass production)",
      "maker": "Samsung",
      "date": "2014-03",
      "measure": "density_gbit",
      "value": 4,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-20nm-4gb-ddr3-2014-03",
      "source_kind": "press",
      "source_title": "Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology",
      "source_publisher": "Samsung Newsroom",
      "source_url": "https://news.samsung.com/global/samsung-now-mass-producing-industrys-most-advanced-4gb-ddr3-using-20-nanometer-process-technology",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-20nm-4gb-ddr3-2014-03",
      "label": "20nm 4Gb DDR3 (mass production)",
      "maker": "Samsung",
      "date": "2014-03",
      "measure": "node_class",
      "value": "20nm",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-20nm-4gb-ddr3-2014-03",
      "source_kind": "press",
      "source_title": "Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology",
      "source_publisher": "Samsung Newsroom",
      "source_url": "https://news.samsung.com/global/samsung-now-mass-producing-industrys-most-advanced-4gb-ddr3-using-20-nanometer-process-technology",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "nanya-30nm-4gb-ddr3-2014-05",
      "label": "30nm 4Gb DDR3 (sampling)",
      "maker": "Nanya",
      "date": "2014-05",
      "measure": "density_gbit",
      "value": 4,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "nanya-30nm-4gb-ddr3-broadcom-2014-05",
      "source_kind": "press",
      "source_title": "Nanya Validates DDR3 for Broadcom BCM7445 Ultra HD Video Decoder Solution",
      "source_publisher": "Nanya Technology",
      "source_url": "https://www.nanya.com/en/IR/16?IRId=49",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "nanya-30nm-4gb-ddr3-2014-05",
      "label": "30nm 4Gb DDR3 (sampling)",
      "maker": "Nanya",
      "date": "2014-05",
      "measure": "node_class",
      "value": "30nm",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "nanya-30nm-4gb-ddr3-broadcom-2014-05",
      "source_kind": "press",
      "source_title": "Nanya Validates DDR3 for Broadcom BCM7445 Ultra HD Video Decoder Solution",
      "source_publisher": "Nanya Technology",
      "source_url": "https://www.nanya.com/en/IR/16?IRId=49",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-25nm-8gb-ddr3-2014-07",
      "label": "25nm 8Gb monolithic DDR3 (announced)",
      "maker": "Micron",
      "date": "2014-07",
      "measure": "density_gbit",
      "value": 8,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-ddr3-8gb-25nm-2014-07",
      "source_kind": "press",
      "source_title": "Micron Announces Industry's First Monolithic 8Gb DDR3 SDRAM (original investors.micron.com page, web.archive.org copy)",
      "source_publisher": "Micron Technology",
      "source_url": "https://web.archive.org/web/2/https://investors.micron.com/news-releases/news-release-details/micron-announces-industrys-first-monolithic-8gb-ddr3-sdram",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-25nm-8gb-ddr3-2014-07",
      "label": "25nm 8Gb monolithic DDR3 (announced)",
      "maker": "Micron",
      "date": "2014-07",
      "measure": "node_class",
      "value": "25nm",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-ddr3-8gb-25nm-2014-07",
      "source_kind": "press",
      "source_title": "Micron Announces Industry's First Monolithic 8Gb DDR3 SDRAM (original investors.micron.com page, web.archive.org copy)",
      "source_publisher": "Micron Technology",
      "source_url": "https://web.archive.org/web/2/https://investors.micron.com/news-releases/news-release-details/micron-announces-industrys-first-monolithic-8gb-ddr3-sdram",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "nanya-20nm-4gb-ddr3-2017-10",
      "label": "20nm 4Gb DDR3 (volume shipment)",
      "maker": "Nanya",
      "date": "2017-10",
      "measure": "density_gbit",
      "value": 4,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "nanya-q3-2017-results",
      "source_kind": "press",
      "source_title": "Nanya Technology Reports Third Quarter 2017 Results",
      "source_publisher": "Nanya Technology",
      "source_url": "https://www.nanya.com/en/Activity?Action=IR_investorcalendar_FileName&Id=93&column=PressRelease",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "nanya-20nm-4gb-ddr3-2017-10",
      "label": "20nm 4Gb DDR3 (volume shipment)",
      "maker": "Nanya",
      "date": "2017-10",
      "measure": "node_class",
      "value": "20nm",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "nanya-q3-2017-results",
      "source_kind": "press",
      "source_title": "Nanya Technology Reports Third Quarter 2017 Results",
      "source_publisher": "Nanya Technology",
      "source_url": "https://www.nanya.com/en/Activity?Action=IR_investorcalendar_FileName&Id=93&column=PressRelease",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-30nm-class-2gb-ddr4-2011-04",
      "label": "30nm-class 2Gb DDR4 (developed)",
      "maker": "SK hynix",
      "date": "2011-04",
      "measure": "density_gbit",
      "value": 2,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-2gb-ddr4-30nm-2011-04",
      "source_kind": "press",
      "source_title": "hynix Introduces High Performance DDR4 DRAM",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/hynix-introduces-high-performance-ddr4-dram/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-30nm-class-2gb-ddr4-2011-04",
      "label": "30nm-class 2Gb DDR4 (developed)",
      "maker": "SK hynix",
      "date": "2011-04",
      "measure": "data_rate_product_mts",
      "value": 2400,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-2gb-ddr4-30nm-2011-04",
      "source_kind": "press",
      "source_title": "hynix Introduces High Performance DDR4 DRAM",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/hynix-introduces-high-performance-ddr4-dram/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-30nm-class-2gb-ddr4-2011-04",
      "label": "30nm-class 2Gb DDR4 (developed)",
      "maker": "SK hynix",
      "date": "2011-04",
      "measure": "node_class",
      "value": "30nm class",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-2gb-ddr4-30nm-2011-04",
      "source_kind": "press",
      "source_title": "hynix Introduces High Performance DDR4 DRAM",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/hynix-introduces-high-performance-ddr4-dram/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-30nm-4gb-ddr4-2012-05",
      "label": "30nm 4Gb DDR4 (sampling)",
      "maker": "Micron",
      "date": "2012-05",
      "measure": "density_gbit",
      "value": 4,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-ddr4-4gb-30nm-2012-05",
      "source_kind": "press",
      "source_title": "Micron Announces Its First Fully Functional DDR4 DRAM Module (original investors.micron.com page, web.archive.org copy)",
      "source_publisher": "Micron Technology",
      "source_url": "https://web.archive.org/web/20251204214730/https://investors.micron.com/news-releases/news-release-details/micron-announces-its-first-fully-functional-ddr4-dram-module",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-30nm-4gb-ddr4-2012-05",
      "label": "30nm 4Gb DDR4 (sampling)",
      "maker": "Micron",
      "date": "2012-05",
      "measure": "data_rate_product_mts",
      "value": 2400,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-ddr4-4gb-30nm-2012-05",
      "source_kind": "press",
      "source_title": "Micron Announces Its First Fully Functional DDR4 DRAM Module (original investors.micron.com page, web.archive.org copy)",
      "source_publisher": "Micron Technology",
      "source_url": "https://web.archive.org/web/20251204214730/https://investors.micron.com/news-releases/news-release-details/micron-announces-its-first-fully-functional-ddr4-dram-module",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-30nm-4gb-ddr4-2012-05",
      "label": "30nm 4Gb DDR4 (sampling)",
      "maker": "Micron",
      "date": "2012-05",
      "measure": "node_class",
      "value": "30nm",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-ddr4-4gb-30nm-2012-05",
      "source_kind": "press",
      "source_title": "Micron Announces Its First Fully Functional DDR4 DRAM Module (original investors.micron.com page, web.archive.org copy)",
      "source_publisher": "Micron Technology",
      "source_url": "https://web.archive.org/web/20251204214730/https://investors.micron.com/news-releases/news-release-details/micron-announces-its-first-fully-functional-ddr4-dram-module",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "nanya-30nm-4gb-ddr4-2012-07",
      "label": "30nm 4Gb DDR4 (sampling)",
      "maker": "Nanya",
      "date": "2012-07",
      "measure": "density_gbit",
      "value": 4,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "nanya-q2-2012-results-ddr4-sampling",
      "source_kind": "press",
      "source_title": "Nanya Technology Reports Second Quarter 2012 Results",
      "source_publisher": "Nanya Technology",
      "source_url": "https://www.nanya.com/en/IR/16?IRId=264",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "nanya-30nm-4gb-ddr4-2012-07",
      "label": "30nm 4Gb DDR4 (sampling)",
      "maker": "Nanya",
      "date": "2012-07",
      "measure": "node_class",
      "value": "30nm",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "nanya-q2-2012-results-ddr4-sampling",
      "source_kind": "press",
      "source_title": "Nanya Technology Reports Second Quarter 2012 Results",
      "source_publisher": "Nanya Technology",
      "source_url": "https://www.nanya.com/en/IR/16?IRId=264",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-20nm-class-8gb-ddr4-2014-04",
      "label": "20nm-class 8Gb DDR4 (128GB TSV module announced)",
      "maker": "SK hynix",
      "date": "2014-04",
      "measure": "density_gbit",
      "value": 8,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-128gb-ddr4-module-2014-04",
      "source_kind": "press",
      "source_title": "SK hynix Developed the World’s First Highest Density 128GB DDR4 Module",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/sk-hynix-developed-the-worlds-first-highest-density-128gb-ddr4-module/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-20nm-class-8gb-ddr4-2014-04",
      "label": "20nm-class 8Gb DDR4 (128GB TSV module announced)",
      "maker": "SK hynix",
      "date": "2014-04",
      "measure": "data_rate_product_mts",
      "value": 2133,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-128gb-ddr4-module-2014-04",
      "source_kind": "press",
      "source_title": "SK hynix Developed the World’s First Highest Density 128GB DDR4 Module",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/sk-hynix-developed-the-worlds-first-highest-density-128gb-ddr4-module/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-20nm-class-8gb-ddr4-2014-04",
      "label": "20nm-class 8Gb DDR4 (128GB TSV module announced)",
      "maker": "SK hynix",
      "date": "2014-04",
      "measure": "node_class",
      "value": "20nm class",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-128gb-ddr4-module-2014-04",
      "source_kind": "press",
      "source_title": "SK hynix Developed the World’s First Highest Density 128GB DDR4 Module",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/sk-hynix-developed-the-worlds-first-highest-density-128gb-ddr4-module/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-20nm-class-4gb-ddr4-2014-10",
      "label": "20nm-class 4Gb DDR4 (16GB NVDIMM announced)",
      "maker": "SK hynix",
      "date": "2014-10",
      "measure": "density_gbit",
      "value": 4,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-16gb-nvdimm-4gb-ddr4-2014-10",
      "source_kind": "press",
      "source_title": "SK hynix Developed the World’s Highest Density 16GB NVDIMM",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/sk-hynix-developed-the-worlds-highest-density-16gb-nvdimm",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-20nm-class-4gb-ddr4-2014-10",
      "label": "20nm-class 4Gb DDR4 (16GB NVDIMM announced)",
      "maker": "SK hynix",
      "date": "2014-10",
      "measure": "data_rate_product_mts",
      "value": 2133,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-16gb-nvdimm-4gb-ddr4-2014-10",
      "source_kind": "press",
      "source_title": "SK hynix Developed the World’s Highest Density 16GB NVDIMM",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/sk-hynix-developed-the-worlds-highest-density-16gb-nvdimm",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-20nm-class-4gb-ddr4-2014-10",
      "label": "20nm-class 4Gb DDR4 (16GB NVDIMM announced)",
      "maker": "SK hynix",
      "date": "2014-10",
      "measure": "node_class",
      "value": "20nm class",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-16gb-nvdimm-4gb-ddr4-2014-10",
      "source_kind": "press",
      "source_title": "SK hynix Developed the World’s Highest Density 16GB NVDIMM",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/sk-hynix-developed-the-worlds-highest-density-16gb-nvdimm",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-20nm-8gb-ddr4-2014-10",
      "label": "20nm 8Gb DDR4 (mass production)",
      "maker": "Samsung",
      "date": "2014-10",
      "measure": "density_gbit",
      "value": 8,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-20nm-8gb-ddr4-2014-10",
      "source_kind": "press",
      "source_title": "Samsung Electronics Starts Mass Production of Industry’s First 8-Gigabit DDR4 Based on 20 Nanometer Process Technology",
      "source_publisher": "Samsung Newsroom",
      "source_url": "https://news.samsung.com/global/samsung-electronics-starts-mass-production-of-industrys-first-8-gigabit-ddr4-based-on-20-nanometer-process-technology",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-20nm-8gb-ddr4-2014-10",
      "label": "20nm 8Gb DDR4 (mass production)",
      "maker": "Samsung",
      "date": "2014-10",
      "measure": "data_rate_product_mts",
      "value": 2400,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-20nm-8gb-ddr4-2014-10",
      "source_kind": "press",
      "source_title": "Samsung Electronics Starts Mass Production of Industry’s First 8-Gigabit DDR4 Based on 20 Nanometer Process Technology",
      "source_publisher": "Samsung Newsroom",
      "source_url": "https://news.samsung.com/global/samsung-electronics-starts-mass-production-of-industrys-first-8-gigabit-ddr4-based-on-20-nanometer-process-technology",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-20nm-8gb-ddr4-2014-10",
      "label": "20nm 8Gb DDR4 (mass production)",
      "maker": "Samsung",
      "date": "2014-10",
      "measure": "node_class",
      "value": "20nm",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-20nm-8gb-ddr4-2014-10",
      "source_kind": "press",
      "source_title": "Samsung Electronics Starts Mass Production of Industry’s First 8-Gigabit DDR4 Based on 20 Nanometer Process Technology",
      "source_publisher": "Samsung Newsroom",
      "source_url": "https://news.samsung.com/global/samsung-electronics-starts-mass-production-of-industrys-first-8-gigabit-ddr4-based-on-20-nanometer-process-technology",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-10nm-class-8gb-ddr4-2016-04",
      "label": "10nm-class (1x) 8Gb DDR4 (mass production)",
      "maker": "Samsung",
      "date": "2016-04",
      "measure": "density_gbit",
      "value": 8,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-10nm-class-8gb-ddr4-2016-04",
      "source_kind": "press",
      "source_title": "Samsung Starts Mass Producing Industry’s First 10-Nanometer Class DRAM",
      "source_publisher": "Samsung Newsroom",
      "source_url": "https://news.samsung.com/global/samsung-starts-mass-producing-industrys-first-10-nanometer-class-dram",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-10nm-class-8gb-ddr4-2016-04",
      "label": "10nm-class (1x) 8Gb DDR4 (mass production)",
      "maker": "Samsung",
      "date": "2016-04",
      "measure": "data_rate_product_mts",
      "value": 3200,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-10nm-class-8gb-ddr4-2016-04",
      "source_kind": "press",
      "source_title": "Samsung Starts Mass Producing Industry’s First 10-Nanometer Class DRAM",
      "source_publisher": "Samsung Newsroom",
      "source_url": "https://news.samsung.com/global/samsung-starts-mass-producing-industrys-first-10-nanometer-class-dram",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-10nm-class-8gb-ddr4-2016-04",
      "label": "10nm-class (1x) 8Gb DDR4 (mass production)",
      "maker": "Samsung",
      "date": "2016-04",
      "measure": "node_class",
      "value": "10nm-class (1x)",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-10nm-class-8gb-ddr4-2016-04",
      "source_kind": "press",
      "source_title": "Samsung Starts Mass Producing Industry’s First 10-Nanometer Class DRAM",
      "source_publisher": "Samsung Newsroom",
      "source_url": "https://news.samsung.com/global/samsung-starts-mass-producing-industrys-first-10-nanometer-class-dram",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-1y-8gb-ddr4-2017-12",
      "label": "2nd-generation 10nm-class (1y) 8Gb DDR4 (mass production)",
      "maker": "Samsung",
      "date": "2017-12",
      "measure": "density_gbit",
      "value": 8,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-1y-8gb-ddr4-2017-12",
      "source_kind": "press",
      "source_title": "Samsung Now Mass Producing Industry’s First 2nd-generation, 10-Nanometer Class DRAM",
      "source_publisher": "Samsung Newsroom",
      "source_url": "https://news.samsung.com/global/samsung-now-mass-producing-industrys-first-2nd-generation-10-nanometer-class-dram",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-1y-8gb-ddr4-2017-12",
      "label": "2nd-generation 10nm-class (1y) 8Gb DDR4 (mass production)",
      "maker": "Samsung",
      "date": "2017-12",
      "measure": "data_rate_product_mts",
      "value": 3600,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-1y-8gb-ddr4-2017-12",
      "source_kind": "press",
      "source_title": "Samsung Now Mass Producing Industry’s First 2nd-generation, 10-Nanometer Class DRAM",
      "source_publisher": "Samsung Newsroom",
      "source_url": "https://news.samsung.com/global/samsung-now-mass-producing-industrys-first-2nd-generation-10-nanometer-class-dram",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-1y-8gb-ddr4-2017-12",
      "label": "2nd-generation 10nm-class (1y) 8Gb DDR4 (mass production)",
      "maker": "Samsung",
      "date": "2017-12",
      "measure": "node_class",
      "value": "2nd-generation 10nm-class (1y-nm)",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-1y-8gb-ddr4-2017-12",
      "source_kind": "press",
      "source_title": "Samsung Now Mass Producing Industry’s First 2nd-generation, 10-Nanometer Class DRAM",
      "source_publisher": "Samsung Newsroom",
      "source_url": "https://news.samsung.com/global/samsung-now-mass-producing-industrys-first-2nd-generation-10-nanometer-class-dram",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "nanya-20nm-8gb-ddr4-2018-01",
      "label": "20nm 8Gb DDR4 (mass production)",
      "maker": "Nanya",
      "date": "2018-01",
      "measure": "density_gbit",
      "value": 8,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "nanya-q4-2017-results",
      "source_kind": "press",
      "source_title": "Nanya Technology Reports Fourth Quarter and Year 2017 Results",
      "source_publisher": "Nanya Technology",
      "source_url": "https://www.nanya.com/en/Activity?Action=IR_PressCenter_FileName&Id=408",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "nanya-20nm-8gb-ddr4-2018-01",
      "label": "20nm 8Gb DDR4 (mass production)",
      "maker": "Nanya",
      "date": "2018-01",
      "measure": "node_class",
      "value": "20nm",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "nanya-q4-2017-results",
      "source_kind": "press",
      "source_title": "Nanya Technology Reports Fourth Quarter and Year 2017 Results",
      "source_publisher": "Nanya Technology",
      "source_url": "https://www.nanya.com/en/Activity?Action=IR_PressCenter_FileName&Id=408",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-1ynm-8gb-ddr4-2018-11",
      "label": "1Ynm 8Gb DDR4 (developed)",
      "maker": "SK hynix",
      "date": "2018-11",
      "measure": "density_gbit",
      "value": 8,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-1ynm-8gb-ddr4-2018-11",
      "source_kind": "press",
      "source_title": "SK hynix Inc. Develops 1Ynm 8Gb DDR4 DRAM",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/sk-hynix-inc-develops-1ynm-8gb-ddr4-dram/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-1ynm-8gb-ddr4-2018-11",
      "label": "1Ynm 8Gb DDR4 (developed)",
      "maker": "SK hynix",
      "date": "2018-11",
      "measure": "data_rate_product_mts",
      "value": 3200,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-1ynm-8gb-ddr4-2018-11",
      "source_kind": "press",
      "source_title": "SK hynix Inc. Develops 1Ynm 8Gb DDR4 DRAM",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/sk-hynix-inc-develops-1ynm-8gb-ddr4-dram/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-1ynm-8gb-ddr4-2018-11",
      "label": "1Ynm 8Gb DDR4 (developed)",
      "maker": "SK hynix",
      "date": "2018-11",
      "measure": "node_class",
      "value": "1Ynm",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-1ynm-8gb-ddr4-2018-11",
      "source_kind": "press",
      "source_title": "SK hynix Inc. Develops 1Ynm 8Gb DDR4 DRAM",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/sk-hynix-inc-develops-1ynm-8gb-ddr4-dram/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-1z-8gb-ddr4-2019-03",
      "label": "3rd-generation 10nm-class (1z) 8Gb DDR4 (development)",
      "maker": "Samsung",
      "date": "2019-03",
      "measure": "density_gbit",
      "value": 8,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-1z-8gb-ddr4-develop-2019-03",
      "source_kind": "press",
      "source_title": "Samsung Develops Industry’s First 3rd-generation 10nm-Class DRAM for Premium Memory Applications",
      "source_publisher": "Samsung Newsroom",
      "source_url": "https://news.samsung.com/global/samsung-develops-industrys-first-3rd-generation-10nm-class-dram-for-premium-memory-applications",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-1z-8gb-ddr4-2019-03",
      "label": "3rd-generation 10nm-class (1z) 8Gb DDR4 (development)",
      "maker": "Samsung",
      "date": "2019-03",
      "measure": "node_class",
      "value": "3rd-generation 10nm-class (1z-nm)",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-1z-8gb-ddr4-develop-2019-03",
      "source_kind": "press",
      "source_title": "Samsung Develops Industry’s First 3rd-generation 10nm-Class DRAM for Premium Memory Applications",
      "source_publisher": "Samsung Newsroom",
      "source_url": "https://news.samsung.com/global/samsung-develops-industrys-first-3rd-generation-10nm-class-dram-for-premium-memory-applications",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-1z-16gb-ddr4-2019-08",
      "label": "1z nm 16Gb DDR4 (mass production)",
      "maker": "Micron",
      "date": "2019-08",
      "measure": "density_gbit",
      "value": 16,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-ddr4-16gb-1z-2019-08",
      "source_kind": "press",
      "source_title": "Micron Commences Volume Production of 1z Nanometer DRAM Process Node",
      "source_publisher": "Micron Technology",
      "source_url": "http://investors.micron.com/news/press-release/2019/Micron-Commences-Volume-Production-of-1z-Nanometer-DRAM-Process-Node-08-15-2019/default.aspx",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-1z-16gb-ddr4-2019-08",
      "label": "1z nm 16Gb DDR4 (mass production)",
      "maker": "Micron",
      "date": "2019-08",
      "measure": "node_class",
      "value": "1z nm",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-ddr4-16gb-1z-2019-08",
      "source_kind": "press",
      "source_title": "Micron Commences Volume Production of 1z Nanometer DRAM Process Node",
      "source_publisher": "Micron Technology",
      "source_url": "http://investors.micron.com/news/press-release/2019/Micron-Commences-Volume-Production-of-1z-Nanometer-DRAM-Process-Node-08-15-2019/default.aspx",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "cxmt-8gb-ddr4-2019-09",
      "label": "8Gb DDR4 (mass production announced)",
      "maker": "CXMT",
      "date": "2019-09",
      "measure": "density_gbit",
      "value": 8,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "cxmt-about-history",
      "source_kind": "press",
      "source_title": "ABOUT CXMT",
      "source_publisher": "CXMT",
      "source_url": "https://www.cxmt.com/en/about.html",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-1znm-16gb-ddr4-2019-10",
      "label": "1Znm 16Gb DDR4 (developed)",
      "maker": "SK hynix",
      "date": "2019-10",
      "measure": "density_gbit",
      "value": 16,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-1znm-16gb-ddr4-2019-10",
      "source_kind": "press",
      "source_title": "SK hynix Develops 1Znm 16Gb DDR4 DRAM",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/sk-hynix-develops-1znm-16gb-ddr4-dram/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-1znm-16gb-ddr4-2019-10",
      "label": "1Znm 16Gb DDR4 (developed)",
      "maker": "SK hynix",
      "date": "2019-10",
      "measure": "data_rate_product_mts",
      "value": 3200,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-1znm-16gb-ddr4-2019-10",
      "source_kind": "press",
      "source_title": "SK hynix Develops 1Znm 16Gb DDR4 DRAM",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/sk-hynix-develops-1znm-16gb-ddr4-dram/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-1znm-16gb-ddr4-2019-10",
      "label": "1Znm 16Gb DDR4 (developed)",
      "maker": "SK hynix",
      "date": "2019-10",
      "measure": "node_class",
      "value": "1Znm",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-1znm-16gb-ddr4-2019-10",
      "source_kind": "press",
      "source_title": "SK hynix Develops 1Znm 16Gb DDR4 DRAM",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/sk-hynix-develops-1znm-16gb-ddr4-dram/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-1a-ddr4-2021-01",
      "label": "1α DDR4 (volume production; to 16Gb range; die area from a secondary source)",
      "maker": "Micron",
      "date": "2021",
      "measure": "node_class",
      "value": "1α (1-alpha)",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-1alpha-dram-2021-01",
      "source_kind": "press",
      "source_title": "Micron Delivers Industry's First 1α DRAM Technology",
      "source_publisher": "Micron Technology",
      "source_url": "https://investors.micron.com/news/press-release/2021/Micron-Delivers-Industrys-First-1-DRAM-Technology-01-26-2021/default.aspx",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-1a-ddr4-2021-01",
      "label": "1α DDR4 (volume production; to 16Gb range; die area from a secondary source)",
      "maker": "Micron",
      "date": "2021",
      "measure": "die_size_mm2",
      "value": 25.41,
      "unit": "mm2",
      "bound": "",
      "derived": false,
      "teardown": true,
      "source_id": "techinsights-micron-d1alpha-2021",
      "source_kind": "teardown",
      "source_title": "Micron D1α, '14 nm'! The Most Advanced Node Ever on DRAM! (TechInsights, 2021)",
      "source_publisher": "TechInsights",
      "source_url": "https://www.techinsights.com/blog/memory/micron-1a-dram-technology",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-gddr7-2024-07",
      "label": "GDDR7 (introduced; mass production planned 3Q 2024)",
      "maker": "SK hynix",
      "date": "2024-07",
      "measure": "data_rate_product_mts",
      "value": 32000,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-gddr7-press-2024",
      "source_kind": "press",
      "source_title": "SK hynix Enhances Leadership in Graphics Memory With Introduction of Industry’s Best GDDR7 (30 Jul 2024)",
      "source_publisher": "SK hynix",
      "source_url": "https://news.skhynix.com/en/sk-hynix-enhances-leadership-in-graphics-memory-with-introduction-of-industry-best-gddr7/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "nanya-1b-8gb-ddr4-2025-07",
      "label": "1B (10nm-class) 8Gb DDR4 (volume production)",
      "maker": "Nanya",
      "date": "2025-07",
      "measure": "density_gbit",
      "value": 8,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "nanya-q2-2025-results",
      "source_kind": "press",
      "source_title": "Nanya Technology Reports Results for the Second Quarter 2025",
      "source_publisher": "Nanya Technology",
      "source_url": "https://www.nanya.com/en/IR/16?IRId=10032",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "nanya-1b-8gb-ddr4-2025-07",
      "label": "1B (10nm-class) 8Gb DDR4 (volume production)",
      "maker": "Nanya",
      "date": "2025-07",
      "measure": "node_class",
      "value": "1B",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "nanya-q2-2025-results",
      "source_kind": "press",
      "source_title": "Nanya Technology Reports Results for the Second Quarter 2025",
      "source_publisher": "Nanya Technology",
      "source_url": "https://www.nanya.com/en/IR/16?IRId=10032",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-1ynm-16gb-ddr5-2018-11",
      "label": "1Ynm 16Gb DDR5 (developed; RDIMM and UDIMM supplied to a chipset maker)",
      "maker": "SK hynix",
      "date": "2018-11",
      "measure": "density_gbit",
      "value": 16,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-1ynm-16gb-ddr5-2018-11",
      "source_kind": "press",
      "source_title": "SK hynix Inc. Announces 1Ynm 16Gb DDR5 DRAM",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/sk-hynix-inc-announces-1ynm-16gb-ddr5-dram",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-1ynm-16gb-ddr5-2018-11",
      "label": "1Ynm 16Gb DDR5 (developed; RDIMM and UDIMM supplied to a chipset maker)",
      "maker": "SK hynix",
      "date": "2018-11",
      "measure": "data_rate_product_mts",
      "value": 5200,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-1ynm-16gb-ddr5-2018-11",
      "source_kind": "press",
      "source_title": "SK hynix Inc. Announces 1Ynm 16Gb DDR5 DRAM",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/sk-hynix-inc-announces-1ynm-16gb-ddr5-dram",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-1ynm-16gb-ddr5-2018-11",
      "label": "1Ynm 16Gb DDR5 (developed; RDIMM and UDIMM supplied to a chipset maker)",
      "maker": "SK hynix",
      "date": "2018-11",
      "measure": "node_class",
      "value": "1Ynm",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-1ynm-16gb-ddr5-2018-11",
      "source_kind": "press",
      "source_title": "SK hynix Inc. Announces 1Ynm 16Gb DDR5 DRAM",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/sk-hynix-inc-announces-1ynm-16gb-ddr5-dram",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-14nm-ddr5-2021-10",
      "label": "14nm EUV DDR5 (mass production)",
      "maker": "Samsung",
      "date": "2021-10",
      "measure": "data_rate_product_mts",
      "value": 7200,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-14nm-euv-ddr5-2021-10",
      "source_kind": "press",
      "source_title": "Samsung Starts Mass Production of Most Advanced 14nm EUV DDR5 DRAM",
      "source_publisher": "Samsung Newsroom",
      "source_url": "https://news.samsung.com/global/samsung-starts-mass-production-of-most-advanced-14nm-euv-ddr5-dram",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-14nm-ddr5-2021-10",
      "label": "14nm EUV DDR5 (mass production)",
      "maker": "Samsung",
      "date": "2021-10",
      "measure": "node_class",
      "value": "14nm",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-14nm-euv-ddr5-2021-10",
      "source_kind": "press",
      "source_title": "Samsung Starts Mass Production of Most Advanced 14nm EUV DDR5 DRAM",
      "source_publisher": "Samsung Newsroom",
      "source_url": "https://news.samsung.com/global/samsung-starts-mass-production-of-most-advanced-14nm-euv-ddr5-dram",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-1anm-24gb-ddr5-2021-12",
      "label": "1anm 24Gb DDR5 (samples shipped)",
      "maker": "SK hynix",
      "date": "2021-12",
      "measure": "density_gbit",
      "value": 24,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-24gb-ddr5-samples-2021-12",
      "source_kind": "press",
      "source_title": "SK hynix becomes the Industry’s First to Ship 24Gb DDR5 Samples",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/sk-hynix-becomes-the-industrys-first-to-ship-24gb-ddr5-samples",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-1anm-24gb-ddr5-2021-12",
      "label": "1anm 24Gb DDR5 (samples shipped)",
      "maker": "SK hynix",
      "date": "2021-12",
      "measure": "node_class",
      "value": "1anm",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-24gb-ddr5-samples-2021-12",
      "source_kind": "press",
      "source_title": "SK hynix becomes the Industry’s First to Ship 24Gb DDR5 Samples",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/sk-hynix-becomes-the-industrys-first-to-ship-24gb-ddr5-samples",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-12nm-class-16gb-ddr5-2022-12",
      "label": "12nm-class 16Gb DDR5 (development)",
      "maker": "Samsung",
      "date": "2022-12",
      "measure": "density_gbit",
      "value": 16,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-12nm-ddr5-develop-2022-12",
      "source_kind": "press",
      "source_title": "Samsung Electronics Develops Industry’s First 12nm-Class DDR5 DRAM",
      "source_publisher": "Samsung Newsroom",
      "source_url": "https://news.samsung.com/global/samsung-electronics-develops-industrys-first-12nm-class-ddr5-dram",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-12nm-class-16gb-ddr5-2022-12",
      "label": "12nm-class 16Gb DDR5 (development)",
      "maker": "Samsung",
      "date": "2022-12",
      "measure": "data_rate_product_mts",
      "value": 7200,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-12nm-ddr5-develop-2022-12",
      "source_kind": "press",
      "source_title": "Samsung Electronics Develops Industry’s First 12nm-Class DDR5 DRAM",
      "source_publisher": "Samsung Newsroom",
      "source_url": "https://news.samsung.com/global/samsung-electronics-develops-industrys-first-12nm-class-ddr5-dram",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-12nm-class-16gb-ddr5-2022-12",
      "label": "12nm-class 16Gb DDR5 (development)",
      "maker": "Samsung",
      "date": "2022-12",
      "measure": "node_class",
      "value": "12nm-class",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-12nm-ddr5-develop-2022-12",
      "source_kind": "press",
      "source_title": "Samsung Electronics Develops Industry’s First 12nm-Class DDR5 DRAM",
      "source_publisher": "Samsung Newsroom",
      "source_url": "https://news.samsung.com/global/samsung-electronics-develops-industrys-first-12nm-class-ddr5-dram",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-reva-16gb-ddr5-2023-01",
      "label": "16Gb DDR5 die Rev A (datasheet Rev C)",
      "maker": "Micron",
      "date": "2023-01",
      "measure": "density_gbit",
      "value": 16,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-16gb-ddr5-die-reva-datasheet-2023-01",
      "source_kind": "datasheet",
      "source_title": "16Gb DDR5 SDRAM Die Rev A addendum, 16gb_ddr5_sdram_dierevA.pdf Rev. C 01/2023 (Micron datasheet, copy hosted by Farnell)",
      "source_publisher": "Micron Technology (copy hosted by Farnell; micron.com download is login-gated)",
      "source_url": "https://www.farnell.com/datasheets/3916625.pdf",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-reva-16gb-ddr5-2023-01",
      "label": "16Gb DDR5 die Rev A (datasheet Rev C)",
      "maker": "Micron",
      "date": "2023-01",
      "measure": "data_rate_product_mts",
      "value": 4800,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-16gb-ddr5-die-reva-datasheet-2023-01",
      "source_kind": "datasheet",
      "source_title": "16Gb DDR5 SDRAM Die Rev A addendum, 16gb_ddr5_sdram_dierevA.pdf Rev. C 01/2023 (Micron datasheet, copy hosted by Farnell)",
      "source_publisher": "Micron Technology (copy hosted by Farnell; micron.com download is login-gated)",
      "source_url": "https://www.farnell.com/datasheets/3916625.pdf",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-12nm-class-16gb-ddr5-2023-05",
      "label": "12nm-class 16Gb DDR5 (mass production)",
      "maker": "Samsung",
      "date": "2023-05",
      "measure": "density_gbit",
      "value": 16,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-12nm-ddr5-mp-2023-05",
      "source_kind": "press",
      "source_title": "Samsung Electronics Announces Most Advanced 12nm-Class DDR5 DRAM Has Started Mass Production",
      "source_publisher": "Samsung Newsroom",
      "source_url": "https://news.samsung.com/global/samsung-electronics-announces-most-advanced-12nm-class-ddr5-dram-has-started-mass-production",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-12nm-class-16gb-ddr5-2023-05",
      "label": "12nm-class 16Gb DDR5 (mass production)",
      "maker": "Samsung",
      "date": "2023-05",
      "measure": "data_rate_product_mts",
      "value": 7200,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-12nm-ddr5-mp-2023-05",
      "source_kind": "press",
      "source_title": "Samsung Electronics Announces Most Advanced 12nm-Class DDR5 DRAM Has Started Mass Production",
      "source_publisher": "Samsung Newsroom",
      "source_url": "https://news.samsung.com/global/samsung-electronics-announces-most-advanced-12nm-class-ddr5-dram-has-started-mass-production",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-12nm-class-16gb-ddr5-2023-05",
      "label": "12nm-class 16Gb DDR5 (mass production)",
      "maker": "Samsung",
      "date": "2023-05",
      "measure": "node_class",
      "value": "12nm-class",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-12nm-ddr5-mp-2023-05",
      "source_kind": "press",
      "source_title": "Samsung Electronics Announces Most Advanced 12nm-Class DDR5 DRAM Has Started Mass Production",
      "source_publisher": "Samsung Newsroom",
      "source_url": "https://news.samsung.com/global/samsung-electronics-announces-most-advanced-12nm-class-ddr5-dram-has-started-mass-production",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-12nm-class-32gb-ddr5-2023-09",
      "label": "12nm-class 32Gb DDR5 (development)",
      "maker": "Samsung",
      "date": "2023-09",
      "measure": "density_gbit",
      "value": 32,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-32gb-ddr5-2023-09",
      "source_kind": "press",
      "source_title": "Samsung Electronics Unveils Industry’s Highest-Capacity 12nm-Class 32Gb DDR5 DRAM, Ideal for the AI Era",
      "source_publisher": "Samsung Newsroom",
      "source_url": "https://news.samsung.com/global/samsung-electronics-unveils-industrys-first-and-highest-capacity-12nm-class-32gb-ddr5-dram-ideal-for-the-ai-era",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-12nm-class-32gb-ddr5-2023-09",
      "label": "12nm-class 32Gb DDR5 (development)",
      "maker": "Samsung",
      "date": "2023-09",
      "measure": "node_class",
      "value": "12nm-class",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-32gb-ddr5-2023-09",
      "source_kind": "press",
      "source_title": "Samsung Electronics Unveils Industry’s Highest-Capacity 12nm-Class 32Gb DDR5 DRAM, Ideal for the AI Era",
      "source_publisher": "Samsung Newsroom",
      "source_url": "https://news.samsung.com/global/samsung-electronics-unveils-industrys-first-and-highest-capacity-12nm-class-32gb-ddr5-dram-ideal-for-the-ai-era",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-1b-16gb-ddr5-2023-10",
      "label": "1β 16Gb DDR5 (shipping)",
      "maker": "Micron",
      "date": "2023-10",
      "measure": "density_gbit",
      "value": 16,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-ddr5-1beta-16gb-2023-10",
      "source_kind": "press",
      "source_title": "Micron Delivers High-Speed 7,200MT/s DDR5 Memory Using 1β Technology",
      "source_publisher": "Micron Technology",
      "source_url": "https://investors.micron.com/news/press-release/2023/Micron-Delivers-High-Speed-7200MTs-DDR5-Memory-Using-1-Technology-10-10-2023/default.aspx",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-1b-16gb-ddr5-2023-10",
      "label": "1β 16Gb DDR5 (shipping)",
      "maker": "Micron",
      "date": "2023-10",
      "measure": "data_rate_product_mts",
      "value": 7200,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-ddr5-1beta-16gb-2023-10",
      "source_kind": "press",
      "source_title": "Micron Delivers High-Speed 7,200MT/s DDR5 Memory Using 1β Technology",
      "source_publisher": "Micron Technology",
      "source_url": "https://investors.micron.com/news/press-release/2023/Micron-Delivers-High-Speed-7200MTs-DDR5-Memory-Using-1-Technology-10-10-2023/default.aspx",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-1b-16gb-ddr5-2023-10",
      "label": "1β 16Gb DDR5 (shipping)",
      "maker": "Micron",
      "date": "2023-10",
      "measure": "node_class",
      "value": "1β (1-beta)",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-ddr5-1beta-16gb-2023-10",
      "source_kind": "press",
      "source_title": "Micron Delivers High-Speed 7,200MT/s DDR5 Memory Using 1β Technology",
      "source_publisher": "Micron Technology",
      "source_url": "https://investors.micron.com/news/press-release/2023/Micron-Delivers-High-Speed-7200MTs-DDR5-Memory-Using-1-Technology-10-10-2023/default.aspx",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-1b-32gb-ddr5-2023-11",
      "label": "1β 32Gb monolithic DDR5 (announced, in 128GB RDIMM)",
      "maker": "Micron",
      "date": "2023-11",
      "measure": "density_gbit",
      "value": 32,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-ddr5-32gb-128gb-rdimm-2023-11",
      "source_kind": "press",
      "source_title": "Micron First to Enable Ecosystem Partners With the Fastest, Lowest Latency High-Capacity 128GB RDIMMs Using Monolithic 32Gb DRAM",
      "source_publisher": "Micron Technology",
      "source_url": "https://investors.micron.com/news/press-release/2023/Micron-First-to-Enable-Ecosystem-Partners-With-the-Fastest-Lowest-Latency-High-Capacity-128GB-RDIMMs-Using-Monolithic-32Gb-DRAM-11-09-2023/default.aspx",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-1b-32gb-ddr5-2023-11",
      "label": "1β 32Gb monolithic DDR5 (announced, in 128GB RDIMM)",
      "maker": "Micron",
      "date": "2023-11",
      "measure": "data_rate_product_mts",
      "value": 8000,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-ddr5-32gb-128gb-rdimm-2023-11",
      "source_kind": "press",
      "source_title": "Micron First to Enable Ecosystem Partners With the Fastest, Lowest Latency High-Capacity 128GB RDIMMs Using Monolithic 32Gb DRAM",
      "source_publisher": "Micron Technology",
      "source_url": "https://investors.micron.com/news/press-release/2023/Micron-First-to-Enable-Ecosystem-Partners-With-the-Fastest-Lowest-Latency-High-Capacity-128GB-RDIMMs-Using-Monolithic-32Gb-DRAM-11-09-2023/default.aspx",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-1b-32gb-ddr5-2023-11",
      "label": "1β 32Gb monolithic DDR5 (announced, in 128GB RDIMM)",
      "maker": "Micron",
      "date": "2023-11",
      "measure": "node_class",
      "value": "1β (1-beta)",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-ddr5-32gb-128gb-rdimm-2023-11",
      "source_kind": "press",
      "source_title": "Micron First to Enable Ecosystem Partners With the Fastest, Lowest Latency High-Capacity 128GB RDIMMs Using Monolithic 32Gb DRAM",
      "source_publisher": "Micron Technology",
      "source_url": "https://investors.micron.com/news/press-release/2023/Micron-First-to-Enable-Ecosystem-Partners-With-the-Fastest-Lowest-Latency-High-Capacity-128GB-RDIMMs-Using-Monolithic-32Gb-DRAM-11-09-2023/default.aspx",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-1b-32gb-ddr5-2024-05",
      "label": "1β 32Gb monolithic DDR5 (validated and shipping in 128GB RDIMM)",
      "maker": "Micron",
      "date": "2024-05",
      "measure": "density_gbit",
      "value": 32,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-ddr5-32gb-128gb-rdimm-ship-2024-05",
      "source_kind": "press",
      "source_title": "Micron First to Ship Critical Memory for AI Data Centers",
      "source_publisher": "Micron Technology",
      "source_url": "https://investors.micron.com/news/press-release/2024/Micron-First-to-Ship-Critical-Memory-for-AI-Data-Centers-05-01-2024/default.aspx",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-1b-32gb-ddr5-2024-05",
      "label": "1β 32Gb monolithic DDR5 (validated and shipping in 128GB RDIMM)",
      "maker": "Micron",
      "date": "2024-05",
      "measure": "data_rate_product_mts",
      "value": 5600,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-ddr5-32gb-128gb-rdimm-ship-2024-05",
      "source_kind": "press",
      "source_title": "Micron First to Ship Critical Memory for AI Data Centers",
      "source_publisher": "Micron Technology",
      "source_url": "https://investors.micron.com/news/press-release/2024/Micron-First-to-Ship-Critical-Memory-for-AI-Data-Centers-05-01-2024/default.aspx",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-1b-32gb-ddr5-2024-05",
      "label": "1β 32Gb monolithic DDR5 (validated and shipping in 128GB RDIMM)",
      "maker": "Micron",
      "date": "2024-05",
      "measure": "node_class",
      "value": "1β (1-beta)",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-ddr5-32gb-128gb-rdimm-ship-2024-05",
      "source_kind": "press",
      "source_title": "Micron First to Ship Critical Memory for AI Data Centers",
      "source_publisher": "Micron Technology",
      "source_url": "https://investors.micron.com/news/press-release/2024/Micron-First-to-Ship-Critical-Memory-for-AI-Data-Centers-05-01-2024/default.aspx",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-1c-16gb-ddr5-2024-08",
      "label": "1c 16Gb DDR5 (developed; mass production planned 2024)",
      "maker": "SK hynix",
      "date": "2024-08",
      "measure": "density_gbit",
      "value": 16,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-1c-ddr5-2024-08",
      "source_kind": "press",
      "source_title": "SK hynix Develops Industry’s First 1c DDR5",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/sk-hynix-develops-industry-first-1c-ddr5",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-1c-16gb-ddr5-2024-08",
      "label": "1c 16Gb DDR5 (developed; mass production planned 2024)",
      "maker": "SK hynix",
      "date": "2024-08",
      "measure": "data_rate_product_mts",
      "value": 8000,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-1c-ddr5-2024-08",
      "source_kind": "press",
      "source_title": "SK hynix Develops Industry’s First 1c DDR5",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/sk-hynix-develops-industry-first-1c-ddr5",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-1c-16gb-ddr5-2024-08",
      "label": "1c 16Gb DDR5 (developed; mass production planned 2024)",
      "maker": "SK hynix",
      "date": "2024-08",
      "measure": "node_class",
      "value": "1c",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-1c-ddr5-2024-08",
      "source_kind": "press",
      "source_title": "SK hynix Develops Industry’s First 1c DDR5",
      "source_publisher": "SK hynix Newsroom (vendor's own press release page)",
      "source_url": "https://news.skhynix.com/en/sk-hynix-develops-industry-first-1c-ddr5",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-1g-16gb-ddr5-2025-02",
      "label": "1γ 16Gb DDR5 (samples shipped)",
      "maker": "Micron",
      "date": "2025-02",
      "measure": "density_gbit",
      "value": 16,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-ddr5-1gamma-16gb-2025-02",
      "source_kind": "press",
      "source_title": "Micron Announces Shipment of 1γ (1-gamma) DRAM: Pioneering Memory Technology Advancements for Future Compute Needs",
      "source_publisher": "Micron Technology",
      "source_url": "https://investors.micron.com/news-releases/news-release-details/micron-announces-shipment-1g-1-gamma-dram-pioneering-memory",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-1g-16gb-ddr5-2025-02",
      "label": "1γ 16Gb DDR5 (samples shipped)",
      "maker": "Micron",
      "date": "2025-02",
      "measure": "data_rate_product_mts",
      "value": 9200,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-ddr5-1gamma-16gb-2025-02",
      "source_kind": "press",
      "source_title": "Micron Announces Shipment of 1γ (1-gamma) DRAM: Pioneering Memory Technology Advancements for Future Compute Needs",
      "source_publisher": "Micron Technology",
      "source_url": "https://investors.micron.com/news-releases/news-release-details/micron-announces-shipment-1g-1-gamma-dram-pioneering-memory",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-1g-16gb-ddr5-2025-02",
      "label": "1γ 16Gb DDR5 (samples shipped)",
      "maker": "Micron",
      "date": "2025-02",
      "measure": "node_class",
      "value": "1γ (1-gamma)",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-ddr5-1gamma-16gb-2025-02",
      "source_kind": "press",
      "source_title": "Micron Announces Shipment of 1γ (1-gamma) DRAM: Pioneering Memory Technology Advancements for Future Compute Needs",
      "source_publisher": "Micron Technology",
      "source_url": "https://investors.micron.com/news-releases/news-release-details/micron-announces-shipment-1g-1-gamma-dram-pioneering-memory",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "nanya-1b-16gb-ddr5-2025-04",
      "label": "1B (10nm-class) 16Gb DDR5-5600 (delivered)",
      "maker": "Nanya",
      "date": "2025-04",
      "measure": "density_gbit",
      "value": 16,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "nanya-q1-2025-results",
      "source_kind": "press",
      "source_title": "Nanya Technology Reports Results for the First Quarter 2025",
      "source_publisher": "Nanya Technology",
      "source_url": "https://www.nanya.com/en/IR/16?IRId=9012",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "nanya-1b-16gb-ddr5-2025-04",
      "label": "1B (10nm-class) 16Gb DDR5-5600 (delivered)",
      "maker": "Nanya",
      "date": "2025-04",
      "measure": "data_rate_product_mts",
      "value": 5600,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "nanya-q1-2025-results",
      "source_kind": "press",
      "source_title": "Nanya Technology Reports Results for the First Quarter 2025",
      "source_publisher": "Nanya Technology",
      "source_url": "https://www.nanya.com/en/IR/16?IRId=9012",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "nanya-1b-16gb-ddr5-2025-04",
      "label": "1B (10nm-class) 16Gb DDR5-5600 (delivered)",
      "maker": "Nanya",
      "date": "2025-04",
      "measure": "node_class",
      "value": "10nm-class (1B)",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "nanya-q1-2025-results",
      "source_kind": "press",
      "source_title": "Nanya Technology Reports Results for the First Quarter 2025",
      "source_publisher": "Nanya Technology",
      "source_url": "https://www.nanya.com/en/IR/16?IRId=9012",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "cxmt-24gb-ddr5-2025-11",
      "label": "24Gb DDR5 (shown at IC China)",
      "maker": "CXMT",
      "date": "2025-11",
      "measure": "density_gbit",
      "value": 24,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "cxmt-ic-china-ddr5-2025-11",
      "source_kind": "press",
      "source_title": "CXMT Debuts Latest DDR5 & LPDDR5X Portfolio at IC China",
      "source_publisher": "CXMT",
      "source_url": "https://www.cxmt.com/en/news/info_20.html",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "cxmt-24gb-ddr5-2025-11",
      "label": "24Gb DDR5 (shown at IC China)",
      "maker": "CXMT",
      "date": "2025-11",
      "measure": "data_rate_product_mts",
      "value": 8000,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "cxmt-ic-china-ddr5-2025-11",
      "source_kind": "press",
      "source_title": "CXMT Debuts Latest DDR5 & LPDDR5X Portfolio at IC China",
      "source_publisher": "CXMT",
      "source_url": "https://www.cxmt.com/en/news/info_20.html",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-64mb-sdram-1998-02",
      "label": "64Mb SDRAM for PC100 (mass production; the release names the maker Hyundai Electronics)",
      "maker": "SK hynix",
      "date": "1998-02",
      "measure": "density_gbit",
      "value": 0.0625,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-64mb-sdram-press-1998",
      "source_kind": "press",
      "source_title": "World-first mass production of a high-speed 64M SDRAM for PC100 (Hyundai Electronics, Korean release, 9 Feb 1998)",
      "source_publisher": "SK hynix",
      "source_url": "https://news.skhynix.co.kr/produce-worlds-first-high-speed-sdram/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-64mb-sdram-1998-02",
      "label": "64Mb SDRAM for PC100 (mass production; the release names the maker Hyundai Electronics)",
      "maker": "SK hynix",
      "date": "1998-02",
      "measure": "data_rate_product_mts",
      "value": 100,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-64mb-sdram-press-1998",
      "source_kind": "press",
      "source_title": "World-first mass production of a high-speed 64M SDRAM for PC100 (Hyundai Electronics, Korean release, 9 Feb 1998)",
      "source_publisher": "SK hynix",
      "source_url": "https://news.skhynix.co.kr/produce-worlds-first-high-speed-sdram/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "hitachi-0p20um-256mb-sdram-1998-07",
      "label": "0.20-micron 256Mb SDRAM (samples from 8/1998 in Japan)",
      "maker": "Hitachi",
      "date": "1998-07",
      "measure": "density_gbit",
      "value": 0.25,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "hitachi-256mb-sdram-press-1998",
      "source_kind": "press",
      "source_title": "Hitachi Releases 256-Mbit Synchronous DRAMs and the Industry's Highest Density 1-GB Synchronous DRAM Module (13 Jul 1998)",
      "source_publisher": "Hitachi",
      "source_url": "https://www.hitachi.com/New/cnews/E/1998/980713B.html",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "hitachi-0p20um-256mb-sdram-1998-07",
      "label": "0.20-micron 256Mb SDRAM (samples from 8/1998 in Japan)",
      "maker": "Hitachi",
      "date": "1998-07",
      "measure": "data_rate_product_mts",
      "value": 100,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "hitachi-256mb-sdram-press-1998",
      "source_kind": "press",
      "source_title": "Hitachi Releases 256-Mbit Synchronous DRAMs and the Industry's Highest Density 1-GB Synchronous DRAM Module (13 Jul 1998)",
      "source_publisher": "Hitachi",
      "source_url": "https://www.hitachi.com/New/cnews/E/1998/980713B.html",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "hitachi-0p20um-256mb-sdram-1998-07",
      "label": "0.20-micron 256Mb SDRAM (samples from 8/1998 in Japan)",
      "maker": "Hitachi",
      "date": "1998-07",
      "measure": "node_class",
      "value": "0.20 micron",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "hitachi-256mb-sdram-press-1998",
      "source_kind": "press",
      "source_title": "Hitachi Releases 256-Mbit Synchronous DRAMs and the Industry's Highest Density 1-GB Synchronous DRAM Module (13 Jul 1998)",
      "source_publisher": "Hitachi",
      "source_url": "https://www.hitachi.com/New/cnews/E/1998/980713B.html",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "hitachi-0p18um-256mb-sdram-1999-06",
      "label": "0.18-micron 256Mb PC133 SDRAM (samples from 8/1999 in Japan)",
      "maker": "Hitachi",
      "date": "1999-06",
      "measure": "density_gbit",
      "value": 0.25,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "hitachi-256mb-pc133-sdram-press-1999",
      "source_kind": "press",
      "source_title": "Hitachi releases three PC133 256-Mbit SDRAMs and 1GB and 512MB DIMMs (news release, 28 Jun 1999)",
      "source_publisher": "Hitachi",
      "source_url": "https://www.hitachi.com/New/cnews/E/1999/990628B.html",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "hitachi-0p18um-256mb-sdram-1999-06",
      "label": "0.18-micron 256Mb PC133 SDRAM (samples from 8/1999 in Japan)",
      "maker": "Hitachi",
      "date": "1999-06",
      "measure": "data_rate_product_mts",
      "value": 133,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "hitachi-256mb-pc133-sdram-press-1999",
      "source_kind": "press",
      "source_title": "Hitachi releases three PC133 256-Mbit SDRAMs and 1GB and 512MB DIMMs (news release, 28 Jun 1999)",
      "source_publisher": "Hitachi",
      "source_url": "https://www.hitachi.com/New/cnews/E/1999/990628B.html",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "hitachi-0p18um-256mb-sdram-1999-06",
      "label": "0.18-micron 256Mb PC133 SDRAM (samples from 8/1999 in Japan)",
      "maker": "Hitachi",
      "date": "1999-06",
      "measure": "node_class",
      "value": "0.18 micron",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "hitachi-256mb-pc133-sdram-press-1999",
      "source_kind": "press",
      "source_title": "Hitachi releases three PC133 256-Mbit SDRAMs and 1GB and 512MB DIMMs (news release, 28 Jun 1999)",
      "source_publisher": "Hitachi",
      "source_url": "https://www.hitachi.com/New/cnews/E/1999/990628B.html",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-30nm-class-4gb-lpddr2-2011-03",
      "label": "30nm-class 4Gb LPDDR2 (mass production)",
      "maker": "Samsung",
      "date": "2011-03",
      "measure": "density_gbit",
      "value": 4,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-4gb-lpddr2-press-2011",
      "source_kind": "press",
      "source_title": "Samsung begins mass production of the industry's first 4Gb mobile DRAM (Korean release, 25 Mar 2011)",
      "source_publisher": "Samsung",
      "source_url": "https://news.samsung.com/kr/%ec%82%bc%ec%84%b1%ec%a0%84%ec%9e%90-%ec%97%85%ea%b3%84-%ec%b5%9c%ec%b4%88-4gb-%eb%aa%a8%eb%b0%94%ec%9d%bc-d%eb%9e%a8-%ec%96%91%ec%82%b0",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-30nm-class-4gb-lpddr2-2011-03",
      "label": "30nm-class 4Gb LPDDR2 (mass production)",
      "maker": "Samsung",
      "date": "2011-03",
      "measure": "data_rate_product_mts",
      "value": 1066,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-4gb-lpddr2-press-2011",
      "source_kind": "press",
      "source_title": "Samsung begins mass production of the industry's first 4Gb mobile DRAM (Korean release, 25 Mar 2011)",
      "source_publisher": "Samsung",
      "source_url": "https://news.samsung.com/kr/%ec%82%bc%ec%84%b1%ec%a0%84%ec%9e%90-%ec%97%85%ea%b3%84-%ec%b5%9c%ec%b4%88-4gb-%eb%aa%a8%eb%b0%94%ec%9d%bc-d%eb%9e%a8-%ec%96%91%ec%82%b0",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-30nm-class-4gb-lpddr2-2011-03",
      "label": "30nm-class 4Gb LPDDR2 (mass production)",
      "maker": "Samsung",
      "date": "2011-03",
      "measure": "node_class",
      "value": "30nm-class",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-4gb-lpddr2-press-2011",
      "source_kind": "press",
      "source_title": "Samsung begins mass production of the industry's first 4Gb mobile DRAM (Korean release, 25 Mar 2011)",
      "source_publisher": "Samsung",
      "source_url": "https://news.samsung.com/kr/%ec%82%bc%ec%84%b1%ec%a0%84%ec%9e%90-%ec%97%85%ea%b3%84-%ec%b5%9c%ec%b4%88-4gb-%eb%aa%a8%eb%b0%94%ec%9d%bc-d%eb%9e%a8-%ec%96%91%ec%82%b0",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-20nm-class-4gb-lpddr3-2013-04",
      "label": "20nm-class 4Gb LPDDR3 (mass production)",
      "maker": "Samsung",
      "date": "2013-04",
      "measure": "density_gbit",
      "value": 4,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-4gb-lpddr3-press-2013",
      "source_kind": "press",
      "source_title": "Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology (30 Apr 2013)",
      "source_publisher": "Samsung",
      "source_url": "https://news.samsung.com/global/samsung-now-producing-four-gigabit-lpddr3-mobile-dram-using-20nm-class-process-technology",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-20nm-class-4gb-lpddr3-2013-04",
      "label": "20nm-class 4Gb LPDDR3 (mass production)",
      "maker": "Samsung",
      "date": "2013-04",
      "measure": "data_rate_product_mts",
      "value": 2133,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-4gb-lpddr3-press-2013",
      "source_kind": "press",
      "source_title": "Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology (30 Apr 2013)",
      "source_publisher": "Samsung",
      "source_url": "https://news.samsung.com/global/samsung-now-producing-four-gigabit-lpddr3-mobile-dram-using-20nm-class-process-technology",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-20nm-class-4gb-lpddr3-2013-04",
      "label": "20nm-class 4Gb LPDDR3 (mass production)",
      "maker": "Samsung",
      "date": "2013-04",
      "measure": "node_class",
      "value": "20nm-class",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-4gb-lpddr3-press-2013",
      "source_kind": "press",
      "source_title": "Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology (30 Apr 2013)",
      "source_publisher": "Samsung",
      "source_url": "https://news.samsung.com/global/samsung-now-producing-four-gigabit-lpddr3-mobile-dram-using-20nm-class-process-technology",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-20nm-8gb-lpddr4-2014-12",
      "label": "20nm 8Gb LPDDR4 (mass production)",
      "maker": "Samsung",
      "date": "2014-12",
      "measure": "density_gbit",
      "value": 8,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-8gb-lpddr4-press-2014",
      "source_kind": "press",
      "source_title": "Samsung Electronics Starts Mass Production of Industry's First 8-Gigabit LPDDR4 Mobile DRAM (23 Dec 2014)",
      "source_publisher": "Samsung",
      "source_url": "https://news.samsung.com/global/samsung-electronics-starts-mass-production-of-industrys-first-8-gigabit-lpddr4-mobile-dram",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-20nm-8gb-lpddr4-2014-12",
      "label": "20nm 8Gb LPDDR4 (mass production)",
      "maker": "Samsung",
      "date": "2014-12",
      "measure": "data_rate_product_mts",
      "value": 3200,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-8gb-lpddr4-press-2014",
      "source_kind": "press",
      "source_title": "Samsung Electronics Starts Mass Production of Industry's First 8-Gigabit LPDDR4 Mobile DRAM (23 Dec 2014)",
      "source_publisher": "Samsung",
      "source_url": "https://news.samsung.com/global/samsung-electronics-starts-mass-production-of-industrys-first-8-gigabit-lpddr4-mobile-dram",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-20nm-8gb-lpddr4-2014-12",
      "label": "20nm 8Gb LPDDR4 (mass production)",
      "maker": "Samsung",
      "date": "2014-12",
      "measure": "node_class",
      "value": "20nm",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-8gb-lpddr4-press-2014",
      "source_kind": "press",
      "source_title": "Samsung Electronics Starts Mass Production of Industry's First 8-Gigabit LPDDR4 Mobile DRAM (23 Dec 2014)",
      "source_publisher": "Samsung",
      "source_url": "https://news.samsung.com/global/samsung-electronics-starts-mass-production-of-industrys-first-8-gigabit-lpddr4-mobile-dram",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-10nm-class-8gb-lpddr5-2018-07",
      "label": "10nm-class 8Gb LPDDR5 (development)",
      "maker": "Samsung",
      "date": "2018-07",
      "measure": "density_gbit",
      "value": 8,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-8gb-lpddr5-press-2018",
      "source_kind": "press",
      "source_title": "Samsung Electronics Announces Industry's First 8Gb LPDDR5 DRAM for 5G and AI-powered Mobile Applications (17 Jul 2018)",
      "source_publisher": "Samsung",
      "source_url": "https://news.samsung.com/global/samsung-electronics-announces-industrys-first-8gb-lpddr5-dram-for-5g-and-ai-powered-mobile-applications",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-10nm-class-8gb-lpddr5-2018-07",
      "label": "10nm-class 8Gb LPDDR5 (development)",
      "maker": "Samsung",
      "date": "2018-07",
      "measure": "data_rate_product_mts",
      "value": 6400,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-8gb-lpddr5-press-2018",
      "source_kind": "press",
      "source_title": "Samsung Electronics Announces Industry's First 8Gb LPDDR5 DRAM for 5G and AI-powered Mobile Applications (17 Jul 2018)",
      "source_publisher": "Samsung",
      "source_url": "https://news.samsung.com/global/samsung-electronics-announces-industrys-first-8gb-lpddr5-dram-for-5g-and-ai-powered-mobile-applications",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-10nm-class-8gb-lpddr5-2018-07",
      "label": "10nm-class 8Gb LPDDR5 (development)",
      "maker": "Samsung",
      "date": "2018-07",
      "measure": "node_class",
      "value": "10nm-class",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-8gb-lpddr5-press-2018",
      "source_kind": "press",
      "source_title": "Samsung Electronics Announces Industry's First 8Gb LPDDR5 DRAM for 5G and AI-powered Mobile Applications (17 Jul 2018)",
      "source_publisher": "Samsung",
      "source_url": "https://news.samsung.com/global/samsung-electronics-announces-industrys-first-8gb-lpddr5-dram-for-5g-and-ai-powered-mobile-applications",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-10nm-class-12gb-lpddr5-2019-07",
      "label": "10nm-class 12Gb LPDDR5 (mass production)",
      "maker": "Samsung",
      "date": "2019-07",
      "measure": "density_gbit",
      "value": 12,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-12gb-lpddr5-press-2019",
      "source_kind": "press",
      "source_title": "Samsung Begins Mass Production of Industry's First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones (18 Jul 2019)",
      "source_publisher": "Samsung",
      "source_url": "https://news.samsung.com/global/samsung-begins-mass-production-of-industrys-first-12gb-lpddr5-mobile-dram-for-premium-smartphones",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-10nm-class-12gb-lpddr5-2019-07",
      "label": "10nm-class 12Gb LPDDR5 (mass production)",
      "maker": "Samsung",
      "date": "2019-07",
      "measure": "data_rate_product_mts",
      "value": 5500,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-12gb-lpddr5-press-2019",
      "source_kind": "press",
      "source_title": "Samsung Begins Mass Production of Industry's First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones (18 Jul 2019)",
      "source_publisher": "Samsung",
      "source_url": "https://news.samsung.com/global/samsung-begins-mass-production-of-industrys-first-12gb-lpddr5-mobile-dram-for-premium-smartphones",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-10nm-class-12gb-lpddr5-2019-07",
      "label": "10nm-class 12Gb LPDDR5 (mass production)",
      "maker": "Samsung",
      "date": "2019-07",
      "measure": "node_class",
      "value": "10nm-class",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-12gb-lpddr5-press-2019",
      "source_kind": "press",
      "source_title": "Samsung Begins Mass Production of Industry's First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones (18 Jul 2019)",
      "source_publisher": "Samsung",
      "source_url": "https://news.samsung.com/global/samsung-begins-mass-production-of-industrys-first-12gb-lpddr5-mobile-dram-for-premium-smartphones",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-lpddr5t-2023-01",
      "label": "LPDDR5T (samples in 16GB multi-chip packages)",
      "maker": "SK hynix",
      "date": "2023-01",
      "measure": "data_rate_product_mts",
      "value": 9600,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-lpddr5t-press-2023",
      "source_kind": "press",
      "source_title": "SK hynix Develops World's Fastest Mobile DRAM LPDDR5T (Jan 2023)",
      "source_publisher": "SK hynix",
      "source_url": "https://news.skhynix.com/en/sk-hynix-develops-worlds-fastest-mobile-dram-lpddr5t/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-lpddr5t-2023-01",
      "label": "LPDDR5T (samples in 16GB multi-chip packages)",
      "maker": "SK hynix",
      "date": "2023-01",
      "measure": "node_class",
      "value": "1anm",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-lpddr5t-press-2023",
      "source_kind": "press",
      "source_title": "SK hynix Develops World's Fastest Mobile DRAM LPDDR5T (Jan 2023)",
      "source_publisher": "SK hynix",
      "source_url": "https://news.skhynix.com/en/sk-hynix-develops-worlds-fastest-mobile-dram-lpddr5t/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-12nm-class-lpddr5x-2024-04",
      "label": "12nm-class 10.7Gbps LPDDR5X (development)",
      "maker": "Samsung",
      "date": "2024-04",
      "measure": "data_rate_product_mts",
      "value": 10700,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-lpddr5x-10p7-press-2024",
      "source_kind": "press",
      "source_title": "Samsung Develops Industry's Fastest 10.7Gbps LPDDR5X DRAM, Optimized for AI Applications (17 Apr 2024)",
      "source_publisher": "Samsung",
      "source_url": "https://news.samsung.com/global/samsung-develops-industrys-fastest-10-7gbps-lpddr5x-dram-optimized-for-ai-applications",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-12nm-class-lpddr5x-2024-04",
      "label": "12nm-class 10.7Gbps LPDDR5X (development)",
      "maker": "Samsung",
      "date": "2024-04",
      "measure": "node_class",
      "value": "12nm-class",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-lpddr5x-10p7-press-2024",
      "source_kind": "press",
      "source_title": "Samsung Develops Industry's Fastest 10.7Gbps LPDDR5X DRAM, Optimized for AI Applications (17 Apr 2024)",
      "source_publisher": "Samsung",
      "source_url": "https://news.samsung.com/global/samsung-develops-industrys-fastest-10-7gbps-lpddr5x-dram-optimized-for-ai-applications",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-1c-16gb-lpddr6-2026-03",
      "label": "1c 16Gb LPDDR6 (development; supply planned for 2H 2026)",
      "maker": "SK hynix",
      "date": "2026-03",
      "measure": "density_gbit",
      "value": 16,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-1c-lpddr6-press-2026",
      "source_kind": "press",
      "source_title": "SK hynix Develops 1c LPDDR6, 6th-Generation 10nm-Class DRAM (10 Mar 2026)",
      "source_publisher": "SK hynix",
      "source_url": "https://news.skhynix.com/en/1c-lpddr6-development-2026/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-1c-16gb-lpddr6-2026-03",
      "label": "1c 16Gb LPDDR6 (development; supply planned for 2H 2026)",
      "maker": "SK hynix",
      "date": "2026-03",
      "measure": "data_rate_product_mts",
      "value": 10700,
      "unit": "MT/s",
      "bound": "min",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-1c-lpddr6-press-2026",
      "source_kind": "press",
      "source_title": "SK hynix Develops 1c LPDDR6, 6th-Generation 10nm-Class DRAM (10 Mar 2026)",
      "source_publisher": "SK hynix",
      "source_url": "https://news.skhynix.com/en/1c-lpddr6-development-2026/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-1c-16gb-lpddr6-2026-03",
      "label": "1c 16Gb LPDDR6 (development; supply planned for 2H 2026)",
      "maker": "SK hynix",
      "date": "2026-03",
      "measure": "node_class",
      "value": "1c",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-1c-lpddr6-press-2026",
      "source_kind": "press",
      "source_title": "SK hynix Develops 1c LPDDR6, 6th-Generation 10nm-Class DRAM (10 Mar 2026)",
      "source_publisher": "SK hynix",
      "source_url": "https://news.skhynix.com/en/1c-lpddr6-development-2026/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-16gb-lpddr6-2026-09",
      "label": "16GB LPDDR6 (sampled and validated on a Qualcomm Snapdragon platform)",
      "maker": "Samsung",
      "date": "2026-09",
      "measure": "data_rate_product_mts",
      "value": 10700,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-lpddr6-qualcomm-validation-2026-09",
      "source_kind": "press",
      "source_title": "Samsung LPDDR6: Advancing Low-Power Memory for AI with Industry-First Validation on Qualcomm Technologies' New Snapdragon Platform (23 Sep 2026)",
      "source_publisher": "Samsung Semiconductor",
      "source_url": "https://semiconductor.samsung.com/news-events/tech-blog/samsung-lpddr6-advancing-low-power-memory-for-ai-with-industry-first-validation-on-qualcomm-technologies-new-snapdragon-platform/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-512mb-gddr4-2007-06",
      "label": "512Mb GDDR4 (supply for AMD Radeon HD 2900XT cards)",
      "maker": "Samsung",
      "date": "2007-06",
      "measure": "density_gbit",
      "value": 0.5,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-512mb-gddr4-press-2007",
      "source_kind": "press",
      "source_title": "Samsung begins supplying 512Mb GDDR4 graphics DRAM, the industry's only supplier (Korean release, 28 Jun 2007)",
      "source_publisher": "Samsung",
      "source_url": "https://news.samsung.com/kr/%ec%82%bc%ec%84%b1%ec%a0%84%ec%9e%90-%ec%b0%a8%ec%84%b8%eb%8c%80-%ea%b7%b8%eb%9e%98%ed%94%bd-d%eb%9e%a8-512%eb%a9%94%ea%b0%80-gddr4-%ec%97%85%ea%b3%84-%ec%9c%a0%ec%9d%bc-%ea%b3%b5",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-512mb-gddr4-2007-06",
      "label": "512Mb GDDR4 (supply for AMD Radeon HD 2900XT cards)",
      "maker": "Samsung",
      "date": "2007-06",
      "measure": "data_rate_product_mts",
      "value": 3200,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-512mb-gddr4-press-2007",
      "source_kind": "press",
      "source_title": "Samsung begins supplying 512Mb GDDR4 graphics DRAM, the industry's only supplier (Korean release, 28 Jun 2007)",
      "source_publisher": "Samsung",
      "source_url": "https://news.samsung.com/kr/%ec%82%bc%ec%84%b1%ec%a0%84%ec%9e%90-%ec%b0%a8%ec%84%b8%eb%8c%80-%ea%b7%b8%eb%9e%98%ed%94%bd-d%eb%9e%a8-512%eb%a9%94%ea%b0%80-gddr4-%ec%97%85%ea%b3%84-%ec%9c%a0%ec%9d%bc-%ea%b3%b5",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-20nm-8gb-gddr5-2015-01",
      "label": "20nm 8Gb GDDR5 (mass production)",
      "maker": "Samsung",
      "date": "2015-01",
      "measure": "density_gbit",
      "value": 8,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-8gb-gddr5-press-2015",
      "source_kind": "press",
      "source_title": "Samsung Electronics Starts Mass Producing Industry's First 8-Gigabit Graphics DRAM (GDDR5) (15 Jan 2015)",
      "source_publisher": "Samsung",
      "source_url": "https://news.samsung.com/global/samsung-electronics-starts-mass-producing-industrys-first-8-gigabit-graphics-dram-gddr5",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-20nm-8gb-gddr5-2015-01",
      "label": "20nm 8Gb GDDR5 (mass production)",
      "maker": "Samsung",
      "date": "2015-01",
      "measure": "data_rate_product_mts",
      "value": 8000,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-8gb-gddr5-press-2015",
      "source_kind": "press",
      "source_title": "Samsung Electronics Starts Mass Producing Industry's First 8-Gigabit Graphics DRAM (GDDR5) (15 Jan 2015)",
      "source_publisher": "Samsung",
      "source_url": "https://news.samsung.com/global/samsung-electronics-starts-mass-producing-industrys-first-8-gigabit-graphics-dram-gddr5",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-20nm-8gb-gddr5-2015-01",
      "label": "20nm 8Gb GDDR5 (mass production)",
      "maker": "Samsung",
      "date": "2015-01",
      "measure": "node_class",
      "value": "20nm",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-8gb-gddr5-press-2015",
      "source_kind": "press",
      "source_title": "Samsung Electronics Starts Mass Producing Industry's First 8-Gigabit Graphics DRAM (GDDR5) (15 Jan 2015)",
      "source_publisher": "Samsung",
      "source_url": "https://news.samsung.com/global/samsung-electronics-starts-mass-producing-industrys-first-8-gigabit-graphics-dram-gddr5",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-10nm-class-16gb-gddr6-2018-01",
      "label": "10nm-class 16Gb GDDR6 (mass production)",
      "maker": "Samsung",
      "date": "2018-01",
      "measure": "density_gbit",
      "value": 16,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-16gb-gddr6-press-2018",
      "source_kind": "press",
      "source_title": "Samsung Electronics Starts Producing Industry's First 16-Gigabit GDDR6 for Advanced Graphics Systems (18 Jan 2018)",
      "source_publisher": "Samsung",
      "source_url": "https://news.samsung.com/global/samsung-electronics-starts-producing-industrys-first-16-gigabit-gddr6-for-advanced-graphics-systems",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-10nm-class-16gb-gddr6-2018-01",
      "label": "10nm-class 16Gb GDDR6 (mass production)",
      "maker": "Samsung",
      "date": "2018-01",
      "measure": "data_rate_product_mts",
      "value": 18000,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-16gb-gddr6-press-2018",
      "source_kind": "press",
      "source_title": "Samsung Electronics Starts Producing Industry's First 16-Gigabit GDDR6 for Advanced Graphics Systems (18 Jan 2018)",
      "source_publisher": "Samsung",
      "source_url": "https://news.samsung.com/global/samsung-electronics-starts-producing-industrys-first-16-gigabit-gddr6-for-advanced-graphics-systems",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-10nm-class-16gb-gddr6-2018-01",
      "label": "10nm-class 16Gb GDDR6 (mass production)",
      "maker": "Samsung",
      "date": "2018-01",
      "measure": "node_class",
      "value": "10nm-class",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-16gb-gddr6-press-2018",
      "source_kind": "press",
      "source_title": "Samsung Electronics Starts Producing Industry's First 16-Gigabit GDDR6 for Advanced Graphics Systems (18 Jan 2018)",
      "source_publisher": "Samsung",
      "source_url": "https://news.samsung.com/global/samsung-electronics-starts-producing-industrys-first-16-gigabit-gddr6-for-advanced-graphics-systems",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-8gb-gddr6x-2020-09",
      "label": "8Gb GDDR6X (available; in GeForce RTX 3080 and 3090)",
      "maker": "Micron",
      "date": "2020-09",
      "measure": "density_gbit",
      "value": 8,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-gddr6x-press-2020",
      "source_kind": "press",
      "source_title": "World's Fastest Discrete Graphics Memory From Micron Powers NVIDIA's Breakthrough Gaming Speeds (1 Sep 2020)",
      "source_publisher": "Micron",
      "source_url": "https://www.globenewswire.com/news-release/2020/09/01/2087208/14450/en/world-s-fastest-discrete-graphics-memory-from-micron-powers-nvidia-s-breakthrough-gaming-speeds.html",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-8gb-gddr6x-2020-09",
      "label": "8Gb GDDR6X (available; in GeForce RTX 3080 and 3090)",
      "maker": "Micron",
      "date": "2020-09",
      "measure": "data_rate_product_mts",
      "value": 21000,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-gddr6x-press-2020",
      "source_kind": "press",
      "source_title": "World's Fastest Discrete Graphics Memory From Micron Powers NVIDIA's Breakthrough Gaming Speeds (1 Sep 2020)",
      "source_publisher": "Micron",
      "source_url": "https://www.globenewswire.com/news-release/2020/09/01/2087208/14450/en/world-s-fastest-discrete-graphics-memory-from-micron-powers-nvidia-s-breakthrough-gaming-speeds.html",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-16gb-gddr6x-2022-04",
      "label": "16Gb GDDR6X (volume production; in GeForce RTX 3090 Ti)",
      "maker": "Micron",
      "date": "2022-04",
      "measure": "density_gbit",
      "value": 16,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-16gb-gddr6x-press-2022",
      "source_kind": "press",
      "source_title": "Micron GDDR6X Increases Bandwidth and Capacity (12 Apr 2022)",
      "source_publisher": "Micron",
      "source_url": "https://investors.micron.com/news-releases/news-release-details/micron-gddr6x-increases-bandwidth-and-capacity",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-16gb-gddr6x-2022-04",
      "label": "16Gb GDDR6X (volume production; in GeForce RTX 3090 Ti)",
      "maker": "Micron",
      "date": "2022-04",
      "measure": "data_rate_product_mts",
      "value": 21000,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-16gb-gddr6x-press-2022",
      "source_kind": "press",
      "source_title": "Micron GDDR6X Increases Bandwidth and Capacity (12 Apr 2022)",
      "source_publisher": "Micron",
      "source_url": "https://investors.micron.com/news-releases/news-release-details/micron-gddr6x-increases-bandwidth-and-capacity",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-16gb-gddr7-2023-07",
      "label": "16Gb GDDR7 (development)",
      "maker": "Samsung",
      "date": "2023-07",
      "measure": "density_gbit",
      "value": 16,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-16gb-gddr7-press-2023",
      "source_kind": "press",
      "source_title": "Samsung Develops Industry's First GDDR7 DRAM To Unlock the Next Generation of Graphics Performance (19 Jul 2023)",
      "source_publisher": "Samsung",
      "source_url": "https://news.samsung.com/global/samsung-develops-industrys-first-gddr7-dram-to-unlock-the-next-generation-of-graphics-performance",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-16gb-gddr7-2023-07",
      "label": "16Gb GDDR7 (development)",
      "maker": "Samsung",
      "date": "2023-07",
      "measure": "data_rate_product_mts",
      "value": 32000,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-16gb-gddr7-press-2023",
      "source_kind": "press",
      "source_title": "Samsung Develops Industry's First GDDR7 DRAM To Unlock the Next Generation of Graphics Performance (19 Jul 2023)",
      "source_publisher": "Samsung",
      "source_url": "https://news.samsung.com/global/samsung-develops-industrys-first-gddr7-dram-to-unlock-the-next-generation-of-graphics-performance",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-1b-gddr7-2024-06",
      "label": "1β GDDR7 (sampling; available 2H 2024)",
      "maker": "Micron",
      "date": "2024-06",
      "measure": "data_rate_product_mts",
      "value": 32000,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-gddr7-sampling-press-2024",
      "source_kind": "press",
      "source_title": "Micron Samples Next-Gen Graphics Memory for Gaming and AI (4 Jun 2024)",
      "source_publisher": "Micron",
      "source_url": "https://investors.micron.com/news/press-release/2024/Micron-Samples-Next-Gen-Graphics-Memory-for-Gaming-and-AI-06-04-2024/default.aspx",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-1b-gddr7-2024-06",
      "label": "1β GDDR7 (sampling; available 2H 2024)",
      "maker": "Micron",
      "date": "2024-06",
      "measure": "node_class",
      "value": "1β",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-gddr7-sampling-press-2024",
      "source_kind": "press",
      "source_title": "Micron Samples Next-Gen Graphics Memory for Gaming and AI (4 Jun 2024)",
      "source_publisher": "Micron",
      "source_url": "https://investors.micron.com/news/press-release/2024/Micron-Samples-Next-Gen-Graphics-Memory-for-Gaming-and-AI-06-04-2024/default.aspx",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-24gb-gddr7-2024-10",
      "label": "24Gb GDDR7 (development; commercial supply planned early 2025)",
      "maker": "Samsung",
      "date": "2024-10",
      "measure": "density_gbit",
      "value": 24,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-24gb-gddr7-press-2024",
      "source_kind": "press",
      "source_title": "Samsung Develops Industry's First 24Gb GDDR7 DRAM for Next-Generation AI Computing (17 Oct 2024)",
      "source_publisher": "Samsung",
      "source_url": "https://news.samsung.com/global/samsung-develops-industrys-first-24gb-gddr7-dram-for-next-generation-ai-computing",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-24gb-gddr7-2024-10",
      "label": "24Gb GDDR7 (development; commercial supply planned early 2025)",
      "maker": "Samsung",
      "date": "2024-10",
      "measure": "data_rate_product_mts",
      "value": 40000,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-24gb-gddr7-press-2024",
      "source_kind": "press",
      "source_title": "Samsung Develops Industry's First 24Gb GDDR7 DRAM for Next-Generation AI Computing (17 Oct 2024)",
      "source_publisher": "Samsung",
      "source_url": "https://news.samsung.com/global/samsung-develops-industrys-first-24gb-gddr7-dram-for-next-generation-ai-computing",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-24gb-gddr7-2024-10",
      "label": "24Gb GDDR7 (development; commercial supply planned early 2025)",
      "maker": "Samsung",
      "date": "2024-10",
      "measure": "node_class",
      "value": "5th-generation 10nm-class",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "samsung-24gb-gddr7-press-2024",
      "source_kind": "press",
      "source_title": "Samsung Develops Industry's First 24Gb GDDR7 DRAM for Next-Generation AI Computing (17 Oct 2024)",
      "source_publisher": "Samsung",
      "source_url": "https://news.samsung.com/global/samsung-develops-industrys-first-24gb-gddr7-dram-for-next-generation-ai-computing",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-d1b-16gb-lpddr5x-2024-11",
      "label": "16Gb LPDDR5X (D1b, found in a Vivo X200 Pro Satellite; secondary source)",
      "maker": "Samsung",
      "date": "2024-11",
      "measure": "density_gbit",
      "value": 16,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": true,
      "source_id": "techinsights-samsung-d1b-2024",
      "source_kind": "teardown",
      "source_title": "Samsung D1b DRAM Confirmed, Cell Size Much Smaller than Micron D1β (Nov 2024)",
      "source_publisher": "TechInsights",
      "source_url": "https://library.techinsights.com/public/sectioned-blog-viewer/a0e24d07-f721-4346-a58c-73786f397dbd",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-d1b-16gb-lpddr5x-2024-11",
      "label": "16Gb LPDDR5X (D1b, found in a Vivo X200 Pro Satellite; secondary source)",
      "maker": "Samsung",
      "date": "2024-11",
      "measure": "die_size_mm2",
      "value": 36.68,
      "unit": "mm2",
      "bound": "",
      "derived": false,
      "teardown": true,
      "source_id": "techinsights-samsung-d1b-2024",
      "source_kind": "teardown",
      "source_title": "Samsung D1b DRAM Confirmed, Cell Size Much Smaller than Micron D1β (Nov 2024)",
      "source_publisher": "TechInsights",
      "source_url": "https://library.techinsights.com/public/sectioned-blog-viewer/a0e24d07-f721-4346-a58c-73786f397dbd",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-d1b-16gb-lpddr5x-2024-11",
      "label": "16Gb LPDDR5X (D1b, found in a Vivo X200 Pro Satellite; secondary source)",
      "maker": "Samsung",
      "date": "2024-11",
      "measure": "node_class",
      "value": "D1b (mid-12nm class)",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": true,
      "source_id": "techinsights-samsung-d1b-2024",
      "source_kind": "teardown",
      "source_title": "Samsung D1b DRAM Confirmed, Cell Size Much Smaller than Micron D1β (Nov 2024)",
      "source_publisher": "TechInsights",
      "source_url": "https://library.techinsights.com/public/sectioned-blog-viewer/a0e24d07-f721-4346-a58c-73786f397dbd",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-1gamma-lpddr5x-2025-06",
      "label": "1γ LPDDR5X (qualification samples)",
      "maker": "Micron",
      "date": "2025-06",
      "measure": "data_rate_product_mts",
      "value": 10700,
      "unit": "MT/s",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-1gamma-lpddr5x-press-2025",
      "source_kind": "press",
      "source_title": "Micron Ships World’s First 1γ (1-Gamma)-Based LPDDR5X (Jun 2025)",
      "source_publisher": "Micron",
      "source_url": "https://investors.micron.com/news/press-release/2025/Micron-Ships-Worlds-First-1-1-Gamma-Based-LPDDR5X-Enabling-Rich-Mobile-AI-Experiences-06-03-2025/default.aspx",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-1gamma-lpddr5x-2025-06",
      "label": "1γ LPDDR5X (qualification samples)",
      "maker": "Micron",
      "date": "2025-06",
      "measure": "node_class",
      "value": "1γ (1-gamma)",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "micron-1gamma-lpddr5x-press-2025",
      "source_kind": "press",
      "source_title": "Micron Ships World’s First 1γ (1-Gamma)-Based LPDDR5X (Jun 2025)",
      "source_publisher": "Micron",
      "source_url": "https://investors.micron.com/news/press-release/2025/Micron-Ships-Worlds-First-1-1-Gamma-Based-LPDDR5X-Enabling-Rich-Mobile-AI-Experiences-06-03-2025/default.aspx",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-32gb-1b-ddr5-2025-12",
      "label": "32Gb DDR5 (1b, in a 256GB server RDIMM)",
      "maker": "SK hynix",
      "date": "2025-12",
      "measure": "density_gbit",
      "value": 32,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-32gb-1b-rdimm-press-2025",
      "source_kind": "press",
      "source_title": "SK hynix First to Complete Intel Data Center Certification for 32Gb Die-based 256GB Server DDR5 RDIMM (Dec 2025)",
      "source_publisher": "SK hynix",
      "source_url": "https://news.skhynix.com/en/sk-hynix-first-to-complete-intel-data-center-certificationfor-32gb-die-based-256gb-server-ddr5-rdimm/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-32gb-1b-ddr5-2025-12",
      "label": "32Gb DDR5 (1b, in a 256GB server RDIMM)",
      "maker": "SK hynix",
      "date": "2025-12",
      "measure": "node_class",
      "value": "1b (fifth-generation 10nm-class)",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-32gb-1b-rdimm-press-2025",
      "source_kind": "press",
      "source_title": "SK hynix First to Complete Intel Data Center Certification for 32Gb Die-based 256GB Server DDR5 RDIMM (Dec 2025)",
      "source_publisher": "SK hynix",
      "source_url": "https://news.skhynix.com/en/sk-hynix-first-to-complete-intel-data-center-certificationfor-32gb-die-based-256gb-server-ddr5-rdimm/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-1cnm-lpddr5x-2026-04",
      "label": "1cnm LPDDR5X (in a 192GB SOCAMM2 module, mass production)",
      "maker": "SK hynix",
      "date": "2026-04",
      "measure": "node_class",
      "value": "1cnm (sixth-generation 10nm-class)",
      "unit": "",
      "bound": "",
      "derived": false,
      "teardown": false,
      "source_id": "skhynix-socamm2-192gb-1cnm-press-2026",
      "source_kind": "press",
      "source_title": "SK hynix Begins Mass Production of 192GB SOCAMM2 (20 Apr 2026)",
      "source_publisher": "SK hynix",
      "source_url": "https://news.skhynix.com/en/mass-production-socamm2-192gb/",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-d1z-16gb-ddr5-2022",
      "label": "16Gb DDR5 (D1z, die Y32A, in a retail module; secondary source)",
      "maker": "Micron",
      "date": "2022",
      "measure": "density_gbit",
      "value": 16,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": true,
      "source_id": "techinsights-ddr5-three-vendors-2022",
      "source_kind": "teardown",
      "source_title": "Industry-leading DDR5 Technology: Micron vs. Samsung vs. SK Hynix (TechInsights, 2022)",
      "source_publisher": "TechInsights",
      "source_url": "https://www.techinsights.com/blog/industry-leading-ddr5-technology",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "micron-d1z-16gb-ddr5-2022",
      "label": "16Gb DDR5 (D1z, die Y32A, in a retail module; secondary source)",
      "maker": "Micron",
      "date": "2022",
      "measure": "die_size_mm2",
      "value": 66.26,
      "unit": "mm2",
      "bound": "",
      "derived": false,
      "teardown": true,
      "source_id": "techinsights-ddr5-three-vendors-2022",
      "source_kind": "teardown",
      "source_title": "Industry-leading DDR5 Technology: Micron vs. Samsung vs. SK Hynix (TechInsights, 2022)",
      "source_publisher": "TechInsights",
      "source_url": "https://www.techinsights.com/blog/industry-leading-ddr5-technology",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-d1y-16gb-ddr5-2022",
      "label": "16Gb DDR5 (D1y, die K4RAH046VB, in a retail module; secondary source)",
      "maker": "Samsung",
      "date": "2022",
      "measure": "density_gbit",
      "value": 16,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": true,
      "source_id": "techinsights-ddr5-three-vendors-2022",
      "source_kind": "teardown",
      "source_title": "Industry-leading DDR5 Technology: Micron vs. Samsung vs. SK Hynix (TechInsights, 2022)",
      "source_publisher": "TechInsights",
      "source_url": "https://www.techinsights.com/blog/industry-leading-ddr5-technology",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "samsung-d1y-16gb-ddr5-2022",
      "label": "16Gb DDR5 (D1y, die K4RAH046VB, in a retail module; secondary source)",
      "maker": "Samsung",
      "date": "2022",
      "measure": "die_size_mm2",
      "value": 73.58,
      "unit": "mm2",
      "bound": "",
      "derived": false,
      "teardown": true,
      "source_id": "techinsights-ddr5-three-vendors-2022",
      "source_kind": "teardown",
      "source_title": "Industry-leading DDR5 Technology: Micron vs. Samsung vs. SK Hynix (TechInsights, 2022)",
      "source_publisher": "TechInsights",
      "source_url": "https://www.techinsights.com/blog/industry-leading-ddr5-technology",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-d1y-16gb-ddr5-2022",
      "label": "16Gb DDR5 (D1y, die H5CNAG8NM, in a retail module; secondary source)",
      "maker": "SK hynix",
      "date": "2022",
      "measure": "density_gbit",
      "value": 16,
      "unit": "Gbit",
      "bound": "",
      "derived": false,
      "teardown": true,
      "source_id": "techinsights-ddr5-three-vendors-2022",
      "source_kind": "teardown",
      "source_title": "Industry-leading DDR5 Technology: Micron vs. Samsung vs. SK Hynix (TechInsights, 2022)",
      "source_publisher": "TechInsights",
      "source_url": "https://www.techinsights.com/blog/industry-leading-ddr5-technology",
      "source_page": ""
    },
    {
      "record_type": "dram_die",
      "record_id": "skhynix-d1y-16gb-ddr5-2022",
      "label": "16Gb DDR5 (D1y, die H5CNAG8NM, in a retail module; secondary source)",
      "maker": "SK hynix",
      "date": "2022",
      "measure": "die_size_mm2",
      "value": 75.21,
      "unit": "mm2",
      "bound": "",
      "derived": false,
      "teardown": true,
      "source_id": "techinsights-ddr5-three-vendors-2022",
      "source_kind": "teardown",
      "source_title": "Industry-leading DDR5 Technology: Micron vs. Samsung vs. SK Hynix (TechInsights, 2022)",
      "source_publisher": "TechInsights",
      "source_url": "https://www.techinsights.com/blog/industry-leading-ddr5-technology",
      "source_page": ""
    }
  ]
}
